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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC856AWT1/D General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 Unit V V V mAdc COLLECTOR 3 BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1, CWT1 Motorola Preferred Devices MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous 3 1 2 CASE 419–02, STYLE 3 SOT–323/SC–70 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 – 55 to +150 Unit mW °C/W °C DEVICE MARKING BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F; BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –10 mA) Collector – Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) Collector – Base Breakdown Voltage (IC = –10 mA) Emitter – Base Breakdown Voltage (IE = –1.0 mA) BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series V(BR)CEO –65 –45 –30 –80 –50 –30 –80 –50 –30 –5.0 –5.0 –5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — –15 –4.0 V V(BR)CES V V(BR)CBO V V(BR)EBO V Collector Cutoff Current (VCB = –30 V) Collector Cutoff Current (VCB = –30 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in ICBO nA µA Thermal Clad is a registered trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = –10 µA, VCE = –5.0 V) BC856A, BC857A, BC585A BC856A, BC857A, BC858A BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C VCE(sat) — — VBE(sat) — — VBE(on) –0.6 — — — –0.75 –0.82 –0.7 –0.9 — — V — — –0.3 –0.65 V hFE — — — 125 220 420 90 150 270 180 290 520 — — — 250 475 800 V — (IC = –2.0 mA, VCE = –5.0 V) Collector – Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) Base – Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) Base – Emitter On Voltage (IC = –2.0 mA, VCE = –5.0 V) (IC = –10 mA, VCE = –5.0 V) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 V, f = 1.0 MHz) Noise Figure (IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) fT Cob NF 100 — — — — — — 4.5 10 MHz pF dB 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1 BC857/BC858 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = –10 V TA = 25°C V, VOLTAGE (VOLTS) –1.0 –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 VCE(sat) @ IC/IB = 10 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 VBE(on) @ VCE = –10 V TA = 25°C VBE(sat) @ IC/IB = 10 0.3 0.2 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 IC, COLLECTOR CURRENT (mAdc) –100 â€... |
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