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| datasheet.co.kr > datasheet > BC856F > PNP Silicon Transistor (General purpose application Switching application) |
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Semiconductor BC856F PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-55V • Complementary pair with BC846F Ordering Information Type NO. BC856F Marking TA : hFE rank Package Code SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1 2.9±0.1 1.90 BSC 3 0.4±0.05 0.9±0.1 2 0.15±0.05 PIN Connections 1. Base 2. Emitter 3. Collector 0~0.1 KST-2092-000 1 BC856F Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) ° Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -80 -55 -5 -100 200 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise figure (Ta=25°C) ° Symbol BVCEO VBE(ON) VBE(sat) VCE(sat) ICBO hFE* fT Cob NF Test Condition IC=-2mA, IB=0 VCE=-5V, IC=-2mA IC=-100mA, IB=-5mA IC=-100mA, IB=-5mA VCB=-35V, IB=0 VCE=-5V, IE=-2mA VCB=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-200µA, f=1KHz,Rg=2KΩ Min. Typ. Max. -55 110 -900 150 -700 -650 -15 800 4.5 10 Unit V mV mV mV nA MHz pF dB * : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800 KST-2092-000 2 BC856F Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 IC-VBE Fig. 3 IC-VCE Fig. 4 hFE-IC Fig. 5 VCE(sat) -IC KST-2092-000 3 ... |
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