Maker : Philips Semiconductors
Part No. : BC856S

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Product Information

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC856S PNP general purpose double transistor Product specification 1999 Aug 24 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES • Two transistors in one package • Reduces number of components and board space • No mutual interference between the transistors. APPLICATIONS • General purpose switching and small signal amplification. DESCRIPTION PNP double transistor in an SC-88 (SOT363) plastic six lead package. PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 MARKING TYPE NUMBER BC856S 1 Top view 2 3 1 MAM339 BC856S handbook, halfpage 6 5 4 5 4 6 TR2 TR1 2 3 Fig.1 Simplified outline (SC-88) and symbol. MARKING CODE 5Ft LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per transistor VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Per device Ptot Note 1. Refer to SC-88 (SOT363) standard mounting conditions. total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open emitter open base open collector − − − − − −65 − −65 −80 −65 −5 −100 200 +150 150 +150 V V V mA mW °C °C °C PARAMETER CONDITIONS MIN. MAX. UNIT 1999 Aug 24 2 Philips Semiconductors Product specification PNP general purpose double transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-88 (SOT363) standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per transistor ICBO IEBO hFE VCEsat VBEsat Cc fT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency IE = 0; VCB = −30 V IE = 0; VCB = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −2 mA; VCE = −5 V IC = −10 mA; IB = −0.5 mA IC = −100 mA; IB = −5 mA; note 1 IC = −10 mA; IB = −0.5 mA IE = ie = 0; VCB = −10 V; f = 1 MHz IC = −10 mA; VCE = −5 V; f = 100 MHz − − − 110 − − − − 100 − − − − − − 700 − − PARAMETER CONDITIONS MIN. TYP. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 416 BC856S UNIT K/W MAX. −15 −5 −100 − −100 −300 − 2.5 − UNIT nA µA nA mV mV mV pF MHz 1999 Aug 24 3 Philips Semiconductors Product specification PNP general purpose double transistor BC856S 104 handbook, halfpage VCEsat (mV) 103 MCD763 handbook, halfpage 1200 MCD764 VBE (mV) 1000 800 (1) (2) 600 102 (1) 400 (3) (2) (3) 10 10−1 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. 1 10 102 IC (mA) 103 200 10−2 10−1 1 10 102 103 IC (mA) VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. MCD765 handbook, full pagewidth 500 hFE 400 (1) 300 200 (2) (3) 100 0 10−2 10−1 1 10 102 IC (mA) 103 VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 DC current gain as a function of collector current; typical values. 1999 Aug 24 4 Philips Semiconductors Product specification PNP general purpose double transistor PACKAGE OUTLINE Plastic surface mounted package; 6 leads BC856S SOT363 D B E A X y HE v M A 6 5 4 Q pin 1 index A A1 1 e1 e 2 bp 3 w M B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT3...

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