Maker : Infineon Technologies AG
Part No. : BC856W

  Datasheet PDF : BC856W.pdf
  Cross Reference : BC856W Cross Reference
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Product Information

BC856W...BC860W PNP Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC846W, BC847W, BC848W BC849W, BC850W (NPN) 3




2 1 VSO05561 Type BC856AW BC856BW BC857AW BC857BW BC857CW BC858AW BC858BW BC858CW BC859AW BC859BW BC859CW BC860BW BC860CW Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 1 Dec-11-2001 BC856W...BC860W Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 124 °C Junction temperature Storage temperature Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg BC856W BC857W BC858W Unit BC860W BC859W 65 80 80 5 45 50 50 5 100 200 200 200 250 150 -65 ... 150 mW °C 30 30 30 5 mA mA V Thermal Resistance Junction - soldering point 1) RthJS
105 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC856W BC857/860W BC858/859W Symbol min. V(BR)CEO Values typ. max. Unit V 65 45 30 - Collector-base breakdown voltage IC = 10 µA, IE = 0 BC856W BC857/860W BC858/859W V(BR)CBO 80 50 30 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Dec-11-2001 BC856W...BC860W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC856W BC857/860W BC858/859W Unit max. V typ. V(BR)CES 80 50 30 V(BR)EBO ICBO ICBO hFE hFE -group A hFE -group B hFE -group C hFE hFE -group A hFE -group B hFE -group C 125 220 420 VCEsat VBEsat VBE(ON) 600 650 750 820 700 850 75 250 300 650 180 290 520 250 475 800 140 250 480 5 15 5 Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 10 µA, VCE = 5 V nA µA - DC current gain 1) IC = 2 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V mV 1) Pulse test: t ≤=300µs, D = 2% 3 Dec-11-2001 BC856W...BC860W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz fT Ccb Ceb h11e hFE -gr.A hFE -gr.B hFE -gr.C h12e h21e h22e 18 30 60 10 200 330 600 1.5 2 3 2.7 4.5 8.7 250 3 10 5 15 typ. max. Unit MHz pF F BC858W Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k , f = 1 kHz, f = 200 Hz Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k , f = 10 ... 50 Hz F BC859W BC860W Vn BC860W - 1 1 - 4 4 0.11 4 Dec-11-2001  Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k , BC856W f = 1 kHz, f = 200 Hz BC857W 10-4 - dB µV
S k


  BC856W...BC860W Total power dissipation Ptot = f (TS ) Collector-base capacitance CCB = f (VCBO) Em...

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