Maker : Philips Semiconductors
Part No. : BC856W

  Datasheet PDF : BC856W.pdf
  Cross Reference : BC856W Cross Reference
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Product Information

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D187 BC856W; BC857W PNP general purpose transistors Product specification Supersedes data of 1997 Apr 07 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 80) • S-mini package. APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a plastic SOT323 package. NPN complements: BC846W and BC847W. MARKING TYPE NUMBER BC856W BC856AW BC856BW BC857W Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) 3D∗ 3A∗ 3B∗ 3H∗ TYPE NUMBER BC857AW BC857BW BC857CW MARKING CODE(1) 3E∗ 3F∗ 3G∗ 1 Top view BC856W; BC857W PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 3 1 2 2 MAM048 Fig.1 Simplified outline (SOT323) and symbol. 1999 Apr 12 2 Philips Semiconductors Product specification PNP general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC856W BC857W VCEO collector-emitter voltage BC856W BC857W VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − PARAMETER collector-base voltage CONDITIONS open emitter − − BC856W; BC857W MIN. MAX. −80 −50 −65 −45 −5 −100 −200 −200 200 +150 150 +150 V V V V V UNIT mA mA mA mW °C °C °C −65 − −65 1999 Apr 12 3 Philips Semiconductors Product specification PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC856W BC857W BC856AW; BC857AW BC856BW; BC857BW BC857CW VCEsat VBEsat VBE Cc Ce fT F Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = −10 mA; IB = −0.5 mA IC = −100 mA; IB = −5 mA; note 1 IC = −100 mA; IB = −5 mA; note 1 IC = −2 mA; VCE = −5 V IC = −10 mA; VCE = −5 V IE = ie = 0; VCB = −10 V; f = 1 MHz IC = ic =0; VEB = −0.5 V; f = 1 MHz CONDITIONS IE = 0; VCB = −30 V IE = 0; VCB = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −2 mA; VCE = −5 V; see Figs 2, 3 and 4 PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 BC856W; BC857W VALUE 625 UNIT K/W MIN. − − − 125 125 125 220 420 − − − −600 − − − − MAX. −15 −4 −100 475 800 250 475 800 −300 −650 −950 −750 −820 5 12 − 10 UNIT nA µA nA mV mV mV mV mV pF pF MHz dB IC = −10 mA; VCE = −5 V; f = 100 MHz 100 IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz 1999 Apr 12 4 Philips Semiconductors Product specification PNP general purpose transistors BC856W; BC857W handbook, full pagewidth 300 MBH726 hFE 200 VCE = −5 V 100 0 −10−1 −1 −10 −102 IC (mA) −103 BC856AW; BC857AW. Fig.2 DC current gain; typical values. handbook, full pagewidth 400 MBH727 hFE VCE = −5 V 300 200 100 0 −10−2 −10−1 −1 −10 −102 IC (mA) −103 BC856BW; BC857BW. Fig.3 DC current gain; typical values. 1999 Apr 12 5 Philips Semiconductors Product specification PNP general purpose transistors BC856W; BC857W handbook, full pagewidth 600 MBH728 hFE 500 VCE = −5 V 400 300 200 100 0 −10−2 −10−1 −1 −10 −102 IC (mA) −103 BC857CW. Fig.4 DC current gain; typical values. 1999 Apr 12 6 Philips Semiconductors Product ...

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