Maker : Vishay Siliconix
Part No. : BC856

  Datasheet PDF : BC856.pdf
  Cross Reference : BC856 Cross Reference
  Buy Component : BC856 Find Stock and Price

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Product Information

VISHAY BC856 to BC859 Vishay Semiconductors Small Signal Transistors (PNP) Features • PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups A, B, and C) according to their current gain. The type BC856 is available in groups A and B, however, the types BC857, BC558 and BC859 can be supplied in all three groups. The BC849 is a low noise type. • As complementary types, the NPN transistors BC846...BC849 are recomended. 2 1 1 B 3 18978 C 3 E 2 Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.8 mg Marking: BC856A = 3A BC858A = 3J BC856B = 3B BC858B = 3K BC858C = 3L BC857A = 3E BC857B = 3F BC857C = 3G BC859A = 4A BC859B = 4B BC859C = 4C Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Pinning: 1 = Base, 2 = Emitter, 3 = Collector Document Number 85135 Rev. 1.2, 08-Sep-04 www.vishay.com 1 BC856 to BC859 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Collector - base voltage Test condition Part BC856 BC857 BC858 BC859 Collector - emitter voltage (base shorted) BC856 BC857 BC858 BC859 Collector - emitter voltage (base open) BC856 BC857 BC858 BC859 Emitter - base voltage Collector current Peak colector current Peak base current Peak emitter current Power dissipation 1) VISHAY Symbol - VCBO - VCBO - VCBO - VCBO - VCES - VCES - VCES - VCES - VCEO - VCEO - VCEO - VCEO - VEBO - IC - ICM - IBM IEM Value 80 50 30 30 80 50 30 30 65 45 30 30 5 100 200 200 200 310 1) Unit V V V V V V V V V V V V V mA mA mA mA mW Tamb = 25 °C Ptot Device on fiberglass substrate, see layout on third page. Maximum Thermal Resistance Parameter Thermal resistance junction to ambient air Thermal resistance junction to substrate backside Junction temperature Storage temperature range 1) Test condition Symbol RθJA RθSB Tj TS Value 3201) 4501) 150 - 65 to + 150 Unit °C/W °C/W °C °C Device on fiberglass substrate, see layout on third page. Electrical DC Characteristics Parameter Small signal current gain (current gain group A) Small signal current gain (current gain group B) Small signal current gain (current gain group C) Input impedance (current gain group A) Input impedance (current gain group B) Input impedance (current gain group C) Test condition - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz Part Symbol hfe hfe hfe hie hie hie hoe 1.6 3.2 6 Min Typ 220 330 600 2.7 4.5 8.7 18 4.5 8.5 15 30 kΩ kΩ kΩ µS Max Unit Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz group A) www.vishay.com 2 Document Number 85135 Rev. 1.2, 08-Sep-04 VISHAY Parameter Test condition Part Symbol hoe hoe hre hre hre hFE hFE hFE hFE hFE hFE VCEsat VCEsat VBEsat VBEsat VBE VBE BC856 BC857 BC858 BC859 - VCE = 80 V, Tj = 125 °C - VCE = 50 V, Tj = 125 °C - VCE = 30 V, Tj = 125 °C Collector-base cut-off current - VCB = 30 V - VCB = 30 V, Tj = 150 °C BC857 BC857 BC858 BC859 ICES ICES ICES ICES ICES ICES ICES ICES ICBO ICBO BC856 to BC859 Vishay Semiconductors Min Typ 30 60 1.5 x 10-4 2 x 10-4 3 x 10-4 90 150 270 110 200 420 180 290 520 90 250 700 900 600 660 0.2 0.2 0.2 0.2 750 820 15 15 15 15 4 4 4 4 15 5 220 450 800 300 650 mV mV mV mV mV mV nA nA nA nA µA µA µA µA µA µA Max 60 110 Unit µS µS Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz group B) Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz group C) Reverse voltage transfer ratio (current gain group A) Reverse voltage transfer ratio (current gain group B) Reverse voltage transfer ratio (current gain group C) DC current gain (current gain group A) DC current gain (current g...

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