Maker : Motorola Inc
Part No. : BC857ALT1

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC856ALT1/D General Purpose Transistors BC856ALT1,BLT1 BC857ALT1, COLLECTOR 3 PNP Silicon 1 BASE BLT1,CLT1 BC858ALT1,BLT1, CLT1 Motorola Preferred Devices MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 2 EMITTER Unit V V V mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) 1 2 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit DEVICE MARKING BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F; BC857CLT1 = 3G; BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –10 mA) Collector – Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) Collector – Base Breakdown Voltage (IC = –10 mA) Emitter – Base Breakdown Voltage (IE = –1.0 mA) BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series V(BR)CEO –65 –45 –30 –80 –50 –30 –80 –50 –30 –5.0 –5.0 –5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — –15 –4.0 V V(BR)CES V V(BR)CBO V V(BR)EBO V Collector Cutoff Current (VCB = –30 V) Collector Cutoff Current (VCB = –30 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Thermal Clad is a registered trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. ICBO nA µA Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC856ALT1,BLT1 BC857ALT1, BLT1,CLT1 BC858ALT1,BLT1,CLT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = –10 µA, VCE = –5.0 V) BC856A, BC857A, BC585A BC856A, BC857A, BC858A BC857C, BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC857C, BC858C VCE(sat) — — VBE(sat) — — VBE(on) –0.6 — — — –0.75 –0.82 –0.7 –0.9 — — V — — –0.3 –0.65 V hFE — — — 125 220 420 90 150 270 180 290 520 — — — 250 475 800 V — (IC = –2.0 mA, VCE = –5.0 V) Collector – Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) Base – Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) Base – Emitter On Voltage (IC = –2.0 mA, VCE = –5.0 V) (IC = –10 mA, VCE = –5.0 V) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 V, f = 1.0 MHz) Noise Figure (IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) fT Cob NF 100 — — — — — — 4.5 10 MHz pF dB 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data BC856ALT1,BLT1 BC857ALT1, BLT1,CLT1 BC858ALT1,BLT1,CLT1 BC857/BC858 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = –10 V TA = 25°C V, VOLTAGE (VOLTS) –1.0 –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 VCE(sat) @ IC/IB = 10 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 VBE(on) @ VCE = –10 V TA = 25°C VBE(sat) @...

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