Maker : Philips Semiconductors
Part No. : BC857AT

  Datasheet PDF : BC857AT.pdf
  Cross Reference : BC857AT Cross Reference
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Product Information

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BC856T; BC857T PNP general purpose transistors Product specification Supersedes data of 1997 Jul 07 1999 Apr 26 Philips Semiconductors Product specification PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification especially in portable equipment. DESCRIPTION PNP transistor in an SC-75 plastic package. NPN complements: BC846T and BC847T. MARKING TYPE NUMBER BC856AT BC856BT BC857AT MARKING CODE 3A 3B 3E TYPE NUMBER BC857BT BC857CT MARKING CODE 3F 3G handbook, halfpage BC856T; BC857T PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 1 Top view 2 2 MAM362 Fig.1 Simplified outline (SC-75) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BC856AT; BC856BT BC857AT; BC857BT; BC857CT VCEO collector-emitter voltage BC856AT; BC856BT BC857AT; BC857BT; BC857CT VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 −65 −45 −5 −100 −200 −100 150 +150 150 +150 V V V mA mA mA mW °C °C °C CONDITIONS open emitter − − −80 −50 V V MIN. MAX. UNIT 1999 Apr 26 2 Philips Semiconductors Product specification PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC856AT; BC857AT BC856BT; BC857BT BC857CT VCEsat VBE Cc Ce fT F Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA IC = −100 mA; IB = −5 mA; note 1 base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = −2 mA; VCE = −5 V IC = −10 mA; VCE = −5 V IE = ie = 0; VCB = −10 V; f = 1 MHz IC = ic = 0; VEB = −500 mV; f = 1 MHz IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 220 Hz CONDITIONS IE = 0; VCB = −30 V IE = 0; VCB = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −2 mA; VCE = −5 V PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 BC856T; BC857T VALUE 833 UNIT K/W MIN. − − − 125 220 420 − − −600 − − − − TYP. − − − − − − − − − − − 10 − − MAX. UNIT −15 −5 −100 250 475 800 −200 −400 −750 −820 2.5 − − 10 mV mV mV mV pF pF MHz dB nA µA nA IC = −10 mA; VCE = −5 V; f = 100 MHz 100 1999 Apr 26 3 Philips Semiconductors Product specification PNP general purpose transistors BC856T; BC857T handbook, full pagewidth 300 MBH726 hFE 200 VCE = −5 V 100 0 −10−1 −1 −10 −102 IC (mA) −103 BC856AT; BC857AT. Fig.2 DC current gain; typical values. handbook, full pagewidth 400 MBH727 hFE VCE = −5 V 300 200 100 0 −10−2 −10−1 −1 −10 −102 IC (mA) −103 BC856BT; BC857BT. Fig.3 DC current gain; typical values. 1999 Apr 26 4 Philips Semiconductors Product specification PNP general purpose transistors BC856T; BC857T handbook, full pagewidth 600 MBH728 hFE 500 VCE = −5 V 400 300 200 100 0 −10−2 −10−1 −1 −10 −102 IC (mA) −103 BC857CT. Fig.4 DC current gain; typical values. 1999 Apr 26 5 Philips Semiconductors Product specification PNP general purpose transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads BC856T; BC857T SOT416 D B E A X v M A HE 3 Q A 1 e1 e bp 2 w M B A1 c Lp detail X 0 0.5 scale 1 mm DIMENSIONS (mm are the ori...

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