Maker : Infineon Technologies AG
Part No. : BC857BL3

  Datasheet PDF : BC857BL3.pdf
  Cross Reference : BC857BL3 Cross Reference
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Product Information

BC857BL3, BC858BL3 PNP Silicon AF Transistors Preliminary data • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BC847BL3, BC848BL3 (NPN) 3 1 Pin Configuration 1=B 1=B 2=E 2=E 3=C 3=C 2 Package TSLP-3-1 TSLP-3-1 Type BC857BL3 BC858BL3 Maximum Ratings Parameter Collector-emitter voltage BC857BL3 BC858BL3 Collector-emitter voltage BC857BL3 BC858BL3 Collector-base voltage BC857BL3 BC858BL3 Emitter-base voltage BC857BL3 BC858BL3 Collector current Peak collector current Total power dissipation TS ≤ 138°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) Marking 3F 3K Symbol VCEO Value 45 30 Unit V VCES 50 30 VCBO 50 30 VEBO 5 5 IC ICM Ptot Tj Tstg Symbol RthJS 100 200 250 150 -65 ... 150 Value ≤ 50 mA mW °C Unit K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jan-30-2004 BC857BL3, BC858BL3 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Unit Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BC857BL3 IC = 10 mA, IB = 0 , BC858BL3 V(BR)CEO V 45 30 nA 250 290 75 250 700 850 650 15 5 220 475 mV 300 650 750 820 Collector-base breakdown voltage IC = 10 µA, IE = 0 , BC857BL3 IC = 10 µA, IE = 0 , BC858BL3 V(BR)CBO 50 30 V(BR)CES Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 , BC857BL3 IC = 10 µA, VBE = 0 , BC858BL3 50 30 V(BR)EBO I CBO Emitter-base breakdown voltage IE = 0 , IC = 1 µA 5 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0 , TA = 150 °C DC current gainIC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V hFE Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCEsat Base emitter saturation voltage-1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBEsat VBE(ON) Base-emitter voltage-1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V 600 - 2 Jan-30-2004 BC857BL3, BC858BL3 AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz h22e 30 µS h21e 330 h12e 2 10-4 h11e 4.5 kΩ Ceb 8 Ccb 3 pF fT 250 MHz 3 Jan-30-2004 BC857BL3, BC858BL3 DC current gain hFE = ƒ(IC) VCE = 5 V 10 3 EHP00382 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 20 10 2 EHP00380 h FE 5 100 C 25 C ΙC mA 100 C 25 C -50 C 10 2 5 -50 C 10 1 5 10 1 5 10 5 0 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 ΙC 2 10 -1 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat Base-emitter saturation voltage IC = ƒ(V BEsat), h FE = 20 10 2 mA EHP00379 Collector cutoff current ICBO = ƒ(TA) VCBO = 30 V 10 4 nA EHP00381 ΙC 100 C 25 C -50C Ι CB0 10 3 5 10 2 5 10 1 5 10 5 0 10 5 1 max typ 10 0 5 10 -1 10 -1 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat 0 50 100 C TA 150 4 Jan-30-2004 BC857BL3, BC858BL3 Transition frequency fT = ƒ(IC) VCE = 5 V 10 3 MHz EHP00378 Collector-base capacitance CCB= ƒ (VCB0) Emitter-base capacitance CEB= ƒ (VEB0) BC 856...860 EHP00376 fT 5 C CB0 ( C EB0 ) 12 pF 10 8 C EBO 10 2 6 5 4 C CBO 2 10 1 10 -1 5 10 0 5 10 1 mA 10 2 0 10 -1 5 10 0 V VCB0 ΙC 10 1 (VEB0 ) h parameter he = ƒ(IC) normalized VCE = 5V 10 2 he 5 BC 856...860 EHP00383 h parameter he = ƒ(V CE) normalized IC = 2mA BC 856...860 EHP00384 2.0 he 1.5 Ι C = 2 mA h 11 10 1 5 h 11e VCE = 5 V h 12e 10 0 5 1.0 h12 0.5 h 22 h 21e h 22e 10 -1 10 -1 0 5 10 0 mA 10 1 0 10 20 V VCE 30 ΙC 5 Jan-30-2004 ...

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