Maker : Diodes Incorporated
Part No. : BC857BLP

  Datasheet PDF : BC857BLP.pdf
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Product Information

www.DataSheet4U.com SPICE MODEL: BC857BLP Lead-free Green BC857BLP PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features NEW PRODUCT • • • • • Epitaxial Die Construction Complementary NPN Type Available (BC847BLP) Ultra-Small Leadless Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) G DFN1006-3 H Dim A B C D Min 0.95 0.55 0.45 0.20 0.47 0 0.10 0.20   Max 1.075 0.675 0.55 0.30 0.53 0.05 0.20 0.30   Typ 1.00 0.60 0.50 0.25 0.50 0.03 0.15 0.25 0.35 0.40 A Mechanical Data • • • • • • • • Case: DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections Indicator: Collector Dot Terminals: Finish  NiPdAu annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Ordering Information: See Page 3 Marking Code 3W, Dot denotes Collector Side Weight: 0.001 grams TOP VIEW E 1 C B 2 3 K B C M G H K L M N D N L All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Tj, TSTG Value -50 -45 -5.0 -100 -55 to +150 Unit V V V mA °C Characteristic Operating and Storage Temperature Range Thermal Characteristics Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Notes: 1. 2. @ TA = 25°C unless otherwise specified Symbol Pd RθJA Value 250 400 Unit mW °C/W No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30526 Rev. 7 - 2 1 of 4 www.diodes.com BC857BLP © Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Collector-Cutoff Current Gain Bandwidth Product Collector-Base Capacitance Note: @ TA = 25°C unless otherwise specified Symbol (Note 3) (Note 3) (Note 3) (Note 3) (Note 3) (Note 3) (Note 3) (Note 3) V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(SAT) VBE(SAT) VBE(ON) ICBO fT CCBO Min -50 -45 -5 220 — — — -600 — — — 100 — Typ — — — 260 90 250 -700 -850 -670 -710 — — — 3.0 Max — — — 475 -300 -650 — — -750 -820 -15 -4.0 — — Unit V V V — mV mV mV nA µA MHz pF Test Condition IC = 10µA, IB = 0 IC = 10mA, IB = 0 IE = 1µA, IC = 0 VCE = -5.0V, IC = -2.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA VCB = -30V VCB = -30V, TA = 150°C VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz 3. Short duration pulse test used to minimize self-heating effect. 300 V(CE)SAT, COLLECTOR TO EMITTER SATURATION VOLTAGE (mV) 350 Ic/Ib=20 PD, POWER DISSIPATION (mW) 250 300 250 200 150 TA = 150ºC TA = 85ºC 200 TA = 125ºC 150 100 100 50 TA = 25ºC TA = -55ºC 50 0 0 25 50 75 100 125 150 0 1 10 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current 100 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve DS30526 Rev. 7 - 2 2 of 4 www.diodes.com BC857BLP VBE(ON), BASE-EMITTER ON VOLTAGE (mV) 1 Ic/Ib=20 TA = -55ºC V(BE)SAT, BASE TO EMITTER SATURATION VOLTAGE (V) NEW PRODUCT 0.9 0.8 TA = -55ºC 800 TA = 25ºC TA = 25ºC 0.7 0.6 0.5 TA = 125ºC TA = 85ºC TA = 150ºC 600 TA = 85ºC 400 TA = 150ºC TA = 125ºC 0.4 0.3 0.2 0.1 0 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical Base-Emitter Saturation Voltage vs. Collector Current 100 200 VCE = 5V 0 0 2 4 6 8 10 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Base-Emitter Turn-On Voltage vs. Collector Current 1,000 TA = 150ºC TA = 125ºC hFE, DC CURRENT GAIN 100 TA = -55ºC TA = 25ºC TA = 85ºC...

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