Maker : Philips Semiconductors
Part No. : BC857BS

  Datasheet PDF : BC857BS.pdf
  Cross Reference : BC857BS Cross Reference
  Buy Component : BC857BS Find Stock and Price

Shortcut : BC857B  BC857B  BC857B  BC857B  BC857B  BC857B  BC857B  BC857B  BC857B  BC857B  BC857B-3F  BC857B-7  BC857BDW1T1  BC857BDW1T1  BC857BF  BC857BL3  BC857BLP  BC857BLT1  BC857BLT1  BC857BLT1  BC857BLT1  BC857BLT1  BC857BLT3  BC857BLT3  BC857BLT3G  BC857BLT3G  BC857BRLT1  BC857BS  BC857BT  BC857BT  BC857BT  BC857BT-7  BC857BTT1  BC857BV  BC857BV  BC857BW  BC857BW  BC857BW  BC857BW  BC857BW-7  BC857BWT1  BC857BWT1  BC857BWT1 

Product Information

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BC857BS PNP general purpose double transistor Product specification Supersedes data of 1997 Jul 09 1999 Apr 26 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and boardspace • No mutual interference between the transistors. APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP double transistor in an SC-88; SOT363 plastic package. NPN complement: BC847BS. MARKING TYPE NUMBER BC857BS MARKING CODE 3Ft Fig.1 1 Top view 2 3 1 MAM339 BC857BS PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 handbook, halfpage 6 5 4 5 4 6 TR2 TR1 2 3 Simplified outline (SC-88; SOT363) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per transistor VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open emitter open base open collector − − − − − − − −65 − −65 −50 −45 −5 −100 −200 −200 200 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER CONDITIONS MIN. MAX. UNIT 1999 Apr 26 2 Philips Semiconductors Product specification PNP general purpose double transistor THERMAL CHARACTERISTICS SYMBOL Per device Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per transistor ICBO IEBO hFE VCEsat VBEsat VBE Cc Ce fT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency IE = 0; VCB = −30 V IE = 0; VCB = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −2 mA; VCE = −5 V IC = −10 mA; IB = −0.5 mA IC = −100 mA; IB = −5 mA; note 1 IC = −10 mA; IB = −0.5 mA IC = −2 mA; VCE = −5 V IE = ie = 0; VCB = −10 V; f = 1 MHz IC = ic = 0; VEB = −500 mV; f = 1 MHz − − − 200 − − − −600 − − − − − − − − −755 −655 − 10 − PARAMETER CONDITIONS MIN. thermal resistance from junction to ambient note 1 416 PARAMETER CONDITIONS VALUE BC857BS UNIT K/W TYP. MAX. −15 −5 −100 450 −100 −400 − −750 2.2 − − UNIT nA µA nA mV mV mV mV pF pF MHz IC = −10 mA; VCE = −5 V; f = 100 MHz 100 1999 Apr 26 3 Philips Semiconductors Product specification PNP general purpose double transistor BC857BS handbook, full pagewidth 400 MBH727 hFE VCE = −5 V 300 200 100 0 −10−2 −10−1 −1 −10 −102 IC (mA) −103 Fig.2 DC current gain; typical values 1999 Apr 26 4 Philips Semiconductors Product specification PNP general purpose double transistor PACKAGE OUTLINE Plastic surface mounted package; 6 leads BC857BS SOT363 D B E A X y HE v M A 6 5 4 Q pin 1 index A A1 1 e1 e 2 bp 3 w M B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC EIAJ SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 26 5 Philips Semiconductors Product specification PNP general purpose double transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limi...

Link URL