Maker : ON Semiconductor
Part No. : BC857CTT1

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www.DataSheet4U.com BC857BTT1, BC857CTT1 Preferred Devices General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−416/SC−75 which is designed for low power surface mount applications. Features http://onsemi.com COLLECTOR 3 1 BASE • Pb−Free Package is Available* MAXIMUM RATINGS (TA = 25°C) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Max −45 −50 −5.0 −100 Unit V V V mAdc 3 2 EMITTER Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2 1 CASE 463 SOT−416 STYLE 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR−4 Board (Note 1) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation, FR−4 Board (Note 2) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range 1. FR−4 @ min pad. 2. FR−4 @ 1.0 × 1.0 in pad. Symbol PD 200 1.6 RqJA PD 300 2.4 RqJA TJ, Tstg 400 −55 to +150 mW mW/°C °C/W °C 600 mW mW/°C °C/W Max Unit MARKING DIAGRAM xxM xx = Device Code M = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2004 1 June, 2004 − Rev. 2 Publication Order Number: BC857BTT1/D BC857BTT1, BC857CTT1 www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mA) Collector −Emitter Breakdown Voltage (IC = −10 mA, VEB = 0) Collector −Base Breakdown Voltage (IC = −10 mA) Emitter −Base Breakdown Voltage (IE = −1.0 mA) V(BR)CEO BC857 Series V(BR)CES BC857B Only V(BR)CBO BC857 Series V(BR)EBO BC857 Series ICBO −5.0 − − − − − − −15 −4.0 nA mA −50 − − V −50 − − V −45 − − V V Symbol Min Typ Max Unit Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = −10 mA, VCE = −5.0 V) hFE BC857B BC857C BC857B BC857C VCE(sat) − − VBE(sat) − − VBE(on) −0.6 − − − −0.75 −0.82 −0.7 −0.9 − − − − −0.3 −0.65 − − 220 420 150 270 290 520 − − 475 800 − (IC = −2.0 mA, VCE = −5.0 V) Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) Base −Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 V, f = 1.0 MHz) Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) V V V fT Cob NF 100 − − − − − − 4.5 10 MHz pF dB http://onsemi.com 2 BC857BTT1, BC857CTT1 www.DataSheet4U.com TYPICAL CHARACTERISTICS 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = −10 V TA = 25°C V, VOLTAGE (VOLTS) −1.0 −0.9 −0.8 −0.7 −0.6 −0.5 −0.4 −0.3 −0.2 −0.1 VCE(sat) @ IC/IB = 10 −0.5 −1.0 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mAdc) −50 −100 VBE(...

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