Maker : Philips Semiconductors
Part No. : BC857BV

  Datasheet PDF : BC857BV.pdf
  Cross Reference : BC857BV Cross Reference
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Product Information

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC857BV PNP general purpose double transistor Product specification Supersedes data of 2001 Sep 10 2001 Nov 07 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Excellent coplanarity due to straight leads • Improved thermal behaviour due to flat leads • Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors • Reduces required board space • Reduces pick and place costs. APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP double transistor in a SOT666 plastic package. NPN complement: BC847BV. MARKING TYPE NUMBER BC857BV MARKING CODE 3F 6 5 4 BC857BV PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 6 5 4 TR2 TR1 1 Top view 2 3 MAM450 1 2 3 Fig.1 Simplified outline (SOT666) and symbol. 2001 Nov 07 2 Philips Semiconductors Product specification PNP general purpose double transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per transistor VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. PARAMETER thermal resistance from junction to ambient CONDITIONS notes 1 and 2 VALUE 416 total power dissipation Tamb ≤ 25 °C; note 1 − 300 collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open emitter open base open collector − − − − − − − −65 − −65 −50 −45 −5 PARAMETER CONDITIONS MIN. BC857BV MAX. UNIT V V V mA mA mA mW °C °C °C mW −100 −200 −200 200 +150 150 +150 UNIT K/W 2001 Nov 07 3 Philips Semiconductors Product specification PNP general purpose double transistor CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL Per transistor ICBO IEBO hFE VBE VCEsat VBEsat Cc Ce fT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-base cut-off current emitter-base cut-off current DC current gain base-emitter voltage IE = 0; VCB = −30 V IE = 0; VCB = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −2 mA; VCE = −5 V IC = −2 mA; VCE = −5 V IC = −100 mA; IB = −5. mA; note 1 base-emitter saturation voltage collector capacitance emitter capacitance transition frequency IC = −10 mA; IB = −0.5 mA IE = ie = 0; VCB = −10 V; f = 1 MHz IC = ic = 0; VEB = −500 mV; f = 1 MHz IC = −10 mA; VCE = −5 V; f = 100 MHz − − − 200 −600 − − − − − 100 − − − − −655 − − −755 − 10 − PARAMETER CONDITIONS MIN. TYP. BC857BV MAX. −15 −5 −100 450 −750 −100 −400 − 2.2 − − UNIT nA µA nA mV mV mV mV pF pF MHz collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA 2001 Nov 07 4 Philips Semiconductors Product specification PNP general purpose double transistor Graphical information BC857BV MHB975 BC857BV handbook, halfpage 1000 handbook, halfpage hFE 800 −1200 VBE (mV) −1000 −800 MHB976 (1) 600 (1) −600 −400 (2) 400 (2) (3) 200 (3) −200 −0 −10−2 0 −10−2 −10−1 1 10 102 103 IC (mA) −10−1 −1 −10 VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. −102 −103 IC (mA) Fig.3 Fig.2 DC current gain; typical values. Base-emitter voltage as a function of collector current; typical values. −104 handbook, halfpage VCEsat (mV) MHB977 handbook, halfpage V −1200 BEsat (mV) ...

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