Maker : Diotec Semiconductor
Part No. : BC857BW

  Datasheet PDF : BC857BW.pdf
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Product Information

BC 856W ... BC 860W PNP General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2±0.1 0.3 3 200 mW SOT-323 0.01 g 1±0.1 1.25±0.1 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 2 1.3 Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) BC 856W Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Peak Emitter current – Emitter-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM - IBM IEM Tj TS 65 V 80 V 2.1±0.1 Grenzwerte (TA = 25/C) BC 857W BC 860W 45 V 50 V 5V 200 mW 1) 100 mA 200 mA 200 mA 200 mA 150/C - 65…+ 150/C BC 858W BC 859W 30 V 30 V Characteristics (Tj = 25/C) Group A DC current gain – Kollektor-Basis-Stromverhältnis ) - VCE = 5 V, - IC = 10 :A - VCE = 5 V, - IC = 2 mA hFE hFE typ. 90 110...220 typ. 220 1.6...4.5 kS 18 < 30 :S typ.1.5 *10-4 2 Kennwerte (Tj = 25/C) Group B typ. 150 200...450 typ. 330 3.2...8.5 kS 30 < 60 :S typ. 2 *10-4 Group C typ. 270 420...800 typ. 600 6...15 kS 60 < 110 :S typ. 3 *10-4 h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz Small signal current gain – Stromverstärkung hfe Input impedance – Eingangs-Impedanz Output admittance – Ausgangs-Leitwert Reverse voltage transfer ratio Spannungsrückwirkung 1 hie hoe hre ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 16 01.11.2003 General Purpose Transistors Characteristics (Tj = 25/C) Min. Collector saturation volt. – Kollektor-Sättigungsspannung 1) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter voltage – Basis-Emitter-Spannung 1) - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 30 V IE = 0, - VCB = 30 V, Tj = 150/C Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz - VCB = 10 V, IE = ie = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 :A RG = 2 kS, f = 1 kHz, )f = 200 Hz - VCE = 5 V, - IC = 200 :A RG = 2 kS, f = 30...15 kHz BC 856W... F BC 858W BC 859W... BC860W BC 859W BC 860W F F – – – – RthA fT CCB0 100 MHz – - IEB0 – - ICB0 - ICB0 – – - VBEon - VBEon 600 mV – -VCEsat -VCEsat - VBEsat - VBEsat – – – – BC 856W ... BC 860W Kennwerte (Tj = 25/C) Typ. 75 mV 250 mV 700 mV 850 mV 650 mV – – – – – 10 pF Max. 300 mV 600 mV – – 750 mV 820 mV 15 nA 4 :A 100 nA – 12 pF Base saturation voltage – Basis-Sättigungsspannung 1) Collector-Base Capacitance – Kollektor-Basis-Kapazität – – – – 10 dB 4 dB 4 dB 4 dB 620 K/W 2) Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren BC 856AW = 3A Marking of available current gain groups per type Stempelung der lieferbaren Stromverstärkungsgruppen pro Typ BC 857AW = 3E BC 858AW = 3J BC 846W ... BC 850W BC 856BW = 3B BC 857BW = 3F BC 858BW = 3K BC 859BW = 4B BC 860BW = 4F BC 857CW = 3G BC 858CW = 3L BC 859CW = 4C BC 860CW = 4G ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhält...

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