Maker : Infineon Technologies AG
Part No. : BC857B

  Datasheet PDF : BC857B.pdf
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Product Information

BC856...BC860 PNP Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC846, BC847, BC848 BC849, BC850 (NPN)




3 2 1 VPS05161 Type BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BC859A BC859B BC859C BC860B BC860C Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 1 Dec-11-2001 BC856...BC860 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 71 °C Junction temperature Storage temperature Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg BC856 65 80 80 5 BC857 BC860 45 50 50 5 100 200 200 200 330 150 -65 ... 150 mW °C BC858 BC859 30 30 30 5 mA mA V Unit Thermal Resistance Junction - soldering point 1) RthJS Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO
240 Values typ. max. K/W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Unit V 65 45 30 - BC856 BC857/860 BC858/859 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO BC856 BC857/860 BC858/859 80 50 30 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Dec-11-2001 BC856...BC860 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC856 BC857/860 BC858/859 Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 10 µA, VCE = 5 V hFE -group A hFE -group B hFE -group C DC current gain 1) IC = 2 mA, VCE = 5 V hFE -group A hFE -group B hFE -group C Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(ON) 600 650 750 820 VBEsat 700 850 VCEsat 75 250 300 650 hFE 125 220 420 180 290 520 250 475 800 hFE 140 250 480 ICBO 5 ICBO 15 V(BR)EBO V(BR)CES 80 50 30 5 typ. max. Unit V nA µA - mV 1) Pulse test: t ≤=300µs, D = 2% 3 Dec-11-2001 BC856...BC860 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 k , Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k , f = 10 ... 50 Hz BC 860 BC 859 BC 860 Vn 0.11 F f = 200 Hz h22e 18 30 60 1 4 h21e 200 330 600 h12e 1.5 2 3 2.7 4.5 8.7 Short-circuit input impedance Ceb h11e 8 Ccb 3 fT 250 typ. max. Unit MHz pF 10-4 - dB
 f = 1 kHz, µV 4 Dec-11-2001
S k 
BC856...BC860 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) BC 856...860 EHP00376 360 mW 300 270 C CB0 ( C EB0 ) 12 pF 10 P tot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 8 C EBO 6 4 ...

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