Maker : ON Semiconductor
Part No. : BC857CDW1T1

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Product Information

BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G BC858BDW1T1 = 3K BC858CDW1T1 = 3L MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC BC856 −65 −80 −5.0 −100 BC857 −45 −50 −5.0 −100 BC858 −30 −30 −5.0 −100 Unit V V V mAdc 1 2 3 http://onsemi.com (3) (2) (1) Q1 Q2 (4) (5) (6) DEVICE MARKING 6 5 4 3xm See Table SOT−363/SC−88 CASE 419B Style 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR−5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 3.0 RqJA TJ, Tstg 328 −55 to +150 Unit mW 3x = Specific Device Code x = B, F, G, K, L M = Date Code ORDERING INFORMATION mW/°C °C/W °C Device BC856BDW1T1 BC857BDW1T1 BC857CDW1T1 BC858BDW1T1 BC858CDW1T1 Package SOT−363 SOT−363 SOT−363 SOT−363 SOT−363 Shipping† 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2004 1 January, 2004 − Rev. 3 Publication Order Number: BC856BDW1T1/D BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mA) V(BR)CEO BC856 Series BC857 Series BC858 Series V(BR)CES BC856 Series BC857B Only BC858 Series V(BR)CBO BC856 Series BC857 Series BC858 Series V(BR)EBO BC856 Series BC857 Series BC858 Series ICBO −5.0 −5.0 −5.0 − − − − − − − − − − −15 −4.0 nA mA −80 −50 −30 − − − − − − V −80 −50 −30 − − − − − − V −65 −45 −30 − − − − − − V V Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = −10 mA, VEB = 0) Collector −Base Breakdown Voltage (IC = −10 mA) Emitter −Base Breakdown Voltage (IE = −1.0 mA) Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = −10 mA, VCE = −5.0 V) hFE BC856B, BC857B, BC858B BC857C, BC858C BC856B, BC857B, BC858B BC857C, BC858C VCE(sat) − − VBE(sat) − − VBE(on) −0.6 − − − −0.75 −0.82 −0.7 −0.9 − − − − −0.3 −0.65 − − 220 420 150 270 290 520 − − 475 800 − (IC = −2.0 mA, VCE = −5.0 V) Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) Base −Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 V, f = 1.0 MHz) Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) V V V fT Cob NF 100 − − − − − − 4.5 10 MHz pF dB http://onsemi.com 2 BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series TYPICAL CHARACTERISTICS − BC856 −1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = −5.0 V TA = 25°C 2.0 1.0 0.5 0.2 −0.1 −0.2 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) TJ = 25°...

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