Maker : ON Semiconductor
Part No. : BC857CLT1

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Product Information

BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Emitter Voltage BC856 BC857 BC858, BC859 BC856 BC857 BC858, BC859 Symbol VCEO Value −65 −45 −30 −80 −50 −30 −5.0 −100 Unit V 2 EMITTER Collector-Base Voltage VCBO V 1 V mAdc 2 3 SOT−23 CASE 318 STYLE 6 Emitter−Base Voltage Collector Current − Continuous VEBO IC Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit 1 xxM 2 xx = Device Code M = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 2004 1 June, 2004 − Rev. 8 Publication Order Number: BC856ALT1/D BC856ALT1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mA) Collector −Emitter Breakdown Voltage (IC = −10 mA, VEB = 0) Collector −Base Breakdown Voltage (IC = −10 mA) Emitter −Base Breakdown Voltage (IE = −1.0 mA) BC856 Series BC857 Series BC858, BC859 Series BC856 Series BC857A, BC857B Only BC858, BC859 Series BC856 Series BC857 Series BC858, BC859 Series BC856 Series BC857 Series BC858, BC859 Series V(BR)CEO −65 −45 −30 −80 −50 −30 −80 −50 −30 −5.0 −5.0 −5.0 − − − − − − − − − − − − − − − − − − − − − − − − − − − − −15 −4.0 V Symbol Min Typ Max Unit V(BR)CES V V(BR)CBO V V(BR)EBO V Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = −10 mA, VCE = −5.0 V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC857C, BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C ICBO nA mA hFE − − − 125 220 420 90 150 270 180 290 520 − − −0.7 −0.9 − − − − − 250 475 800 − (IC = −2.0 mA, VCE = −5.0 V) Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) Base −Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 V, f = 1.0 MHz) Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) BC856, BC857, BC858 Series BC859 Series VCE(sat) − − VBE(sat) − − VBE(on) −0.6 − −0.75 −0.82 − − −0.3 −0.65 V V V fT Cob NF 100 − − − − 4.5 MHz pF dB − − − − 10 4.0 http://onsemi.com 2 BC856ALT1 Series BC857/BC858/BC859 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = −10 V TA = 25°C V, VOLTAGE (VOLTS) −1.0 −0.9 −0.8 −0.7 −0.6 −0.5 ...

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