Maker : Philips Semiconductors
Part No. : BC857M

  Datasheet PDF : BC857M.pdf
  Cross Reference : BC857M Cross Reference
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Product Information

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW BC857M series PNP general purpose transistors Product specification Supersedes data of 2003 Jul 15 2004 Mar 10 www.DataSheet4U.com Philips Semiconductors Product specification PNP general purpose transistors FEATURES • Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) • Board space 1.3 × 0.9 mm • Power dissipation comparable to SOT23. APPLICATIONS • General purpose small signal DC • Low and medium frequency AC applications • Mobile communications, digital (still) cameras, PDAs, PCMCIA cards. DESCRIPTION PNP general purpose transistor in a SOT883 leadless ultra small plastic package. NPN complement: BC847M series. MARKING TYPE NUMBER BC857AM BC857BM BC857CM ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BC857AM BC857BM BC857CM − DESCRIPTION MARKING CODE D1 D2 D3 QUICK REFERENCE DATA SYMBOL VCEO IC ICM PINNING PIN 1 2 3 base emitter collector BC857M series PARAMETER collector-emitter voltage collector current (DC) peak collector current MAX. −45 −100 −200 UNIT V mA mA DESCRIPTION handbook, halfpage 3 3 1 2 2 1 Bottom view MAM469 Fig.1 Simplified outline (SOT883) and symbol. VERSION SOT883 Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm 2004 Mar 10 2 www.DataSheet4U.com Philips Semiconductors Product specification PNP general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb ≤ 25 °C note 1 note 2 Tstg Tj Tamb Notes storage temperature junction temperature operating ambient temperature − − −65 − −65 CONDITIONS open emitter open base open collector − − − − − − MIN. BC857M series MAX. −50 −45 −5 −100 −200 −100 250 430 +150 150 +150 V V V UNIT mA mA mA mW mW °C °C °C 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air note 1 note 2 Notes 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2. 500 290 K/W K/W VALUE UNIT 2004 Mar 10 3 www.DataSheet4U.com Philips Semiconductors Product specification PNP general purpose transistors CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain BC857AM BC857BM BC857CM VBE VCEsat Cc fT F Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. base-emitter voltage collector-emitter saturation voltage collector capacitance transition frequency noise figure IC = −2 mA; VCE = −5 V IC = −10 mA; VCE = −5 V IC = −10 mA; IB = −0.5 mA IC = −100 mA; IB = −5 mA; note 1 IE = ie = 0; VCB = −10 V; f = 1 MHz VCE = −5 V; IC = −10 mA; f = 100 MHz IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz CONDITIONS VCB = −30 V; IE = 0 VCB = −30 V; IE = 0; Tj = 150 °C VEB = −5 V; IC = 0 VCE = −5 V; IC = −2 mA 125 220 420 −600 − − − − 100 − − − − BC857M series MIN. MAX. −15 −5 −100 250 475 800 −750 −820 −200 −400 2.5 − 10 UNIT nA µA nA mV mV mV mV pF MHz dB 2004 Mar 10 4 www.DataSheet4U.com Philips Semiconductors Product specification PNP general purpose transistors GRAPHICAL INFORMATION BC857AM MLE188 BC857M series handbook, halfpage 500 handbook, halfpage −1200 VBE (mV) −1000 MLE189 hFE 400 (1) (1) 300 −800 (2) 200 (2) −600 (3) 100 −400 ...

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