|
Free integrated circuits, diodes, triacs, and other semiconductors Datasheet Search and Download Site
| datasheet.co.kr > datasheet > BC857 > PNP general purpose transistors |
|
Product Information |
|
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857 PNP general purpose transistors Product specification Supersedes data of 1997 Apr 17 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC846 and BC847. handbook, halfpage BC856; BC857 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 MARKING TYPE NUMBER BC856 BC856A BC856B BC857 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. MARKING CODE(1) 3D∗ 3A∗ 3B∗ 3H∗ TYPE NUMBER BC857A BC857B BC857C MARKING CODE(1) 3E∗ 3F∗ 3G∗ Top view 1 2 1 2 MAM256 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC856 BC857 VCEO collector-emitter voltage BC856 BC857 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Mounted on an FR4 printed-circuit board. 1999 Apr 12 2 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 −65 −45 −5 −100 −200 −200 250 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − −80 −50 V V MIN. MAX. UNIT Philips Semiconductors Product specification PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC856 BC857 BC856A; BC857A BC856B; BC857B BC857C VCEsat VBEsat VBE Cc fT F Notes 1. VBEsat decreases by about −1.7 m K/V with increasing temperature. 2. VBE decreases by about −2 mV/K with increasing temperature. collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance transition frequency noise figure IC = −10 mA; IB = −0.5 mA IC = −100 mA; IB = −5 mA IC = −10 mA; IB = −0.5 mA; note 1 IC = −100 mA; IB = −5 mA; note 1 IC = −2 mA; VCE = −5 V; note 2 IC = −10 mA; VCE = −5 V; note 2 IE = ie = 0; VCB = −10 V; f = 1 MHz IC = −10 mA; VCE = −5 V; f = 100 MHz IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz CONDITIONS IE = 0; VCB = −30 V IE = 0; VCB = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −2 mA; VCE = −5 V; see Figs 2, 3 and 4 − − − 125 125 125 220 420 − − − − −600 − − 100 − MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 BC856; BC857 VALUE 500 UNIT K/W TYP. −1 − − − − − − − −75 −250 −700 −850 −650 − 4.5 − 2 MAX. −15 −4 100 475 800 250 475 800 −300 −650 − − −750 −820 − − 10 UNIT nA µA nA mV mV mV mV mV mV pF MHz dB 1999 Apr 12 3 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 handbook, full pagewidth 300 MBH726 hFE 200 VCE = −5 V 100 0 −10−1 −1 −10 −102 IC (mA) −103 BC856A; BC857A. Fig.2 DC current gain; typical values. handbook, full pagewidth 400 MBH727 hFE VCE = −5 V 300 200 100 0 −10−2 −10−1 −1 −10 −102 IC (mA) −103 BC856B; BC857B. Fig.3 DC current gain; typical values. 1999 Apr 12 4 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 handbook, full pagewidth 600 MBH728 hFE 500 VCE = −5 V 400 300 200 100 0 −10−2 −10−1 −1 −10 −102 IC (mA) −103 BC857C. Fig.4 DC current gain; typical values. 1999 Apr 12 5 Philips Semiconductors Product specification PNP general purpose transi... |
|
Link URL |
| http://www.datasheet.co.kr/datasheet-html/B/C/8/BC857_PhilipsSemiconductors.pdf.html |
|
Since 2010 - jixjix@gmail.com -
MOSFET -
TTL -
LINEAR VOLTAGE REGULATOR |