Maker : STMicroelectronics
Part No. : BC857

  Datasheet PDF : BC857.pdf
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Product Information

BC857 BC858 SMALL SIGNAL PNP TRANSISTORS Type BC857A BC857B BC858A BC858B s Marking 3E 3F 3J 3K 2 3 1 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS VERY LOW NOISE AF AMPLIFIER NPN COMPLEMENTS FOR BC857 IS BC847 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CBO V CEO V EBO IC I CM I BM I EM P t ot T stg Tj Parameter BC857 Collector-Emitter Voltage (V BE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Peak Current Emitter Peak Current Total Dissipation at T c = 25 oC Storage Temperature Max. O perating Junction Temperature -50 -50 -45 -5 -0.1 -0.2 -0.2 -0.2 300 -65 to 150 150 Value BC858 -30 -30 -30 V V V V A A A A mW o o Uni t C C October 1997 1/5 BC857/BC858 THERMAL DATA R t hj-amb • R th j-SR • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 420 330 o o C/W C/W • Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CE = -30 V V CE = -30 V I C = -10 µA for BC857 for BC858 I C = -10 µA for BC857 for BC858 I C = -2 mA for BC857 for BC858 I C = -10 µA for BC857 for BC858 I C = -10 mA I C = -100 mA I C = -10 mA I C = -100 mA I C = -2 mA I C = -10 mA I C = -10 µA for g rou p A for g rou p B I C = -2 mA for g rou p A for g rou p B I B = -0.5 mA IB = -5 mA I B = -0.5 mA IB = -5 mA V CE = -5 V VCE = -5 V V CE = -5 V 90 150 VCE = -5 V 110 200 180 290 150 6 2 1.2 10 4 220 450 MHz pF dB dB -0.6 Ta mb = 150 o C -50 -30 -50 -30 -45 -30 -6 -5 -0.09 -0.25 -0.75 -0.9 -0.66 -0.72 -0.75 -0.82 -0.3 -0.65 Min. Typ . Max. -15 -5 Un it nA µA V V V V V V V V V V V V V V V (BR)CES ∗ Collector-Emitter Breakdown Voltage (V BE = 0) V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter O n Voltage DC Current G ain V CE(sat )∗ V BE(s at)∗ V BE(on) ∗ h FE fT C CB NF Transition F requency Collector Base Capacitance Noise Figure I C = -10 mA V CE = -5 V f = 100MHz IE = 0 V CB = -10 V f = 1 MHz f = 1KHz V CE = -5 V IC = -0.2 mA ∆f = 200 Hz R G = 2 KΩ ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/5 BC857/BC858 ELECTRICAL CHARACTERISTICS (Continued) Symb ol hie Parameter Input Impedance Test Cond ition s V CE = -5 V IC = -2 mA for g rou p A for g rou p B V CE = -5 V IC = -2 mA for g rou p A for g rou p B V CE = -5 V IC = -2 mA for g rou p A for g rou p B V CE = -5 V IC = -2 mA for g rou p A for g rou p B f = 1KHz 1.6 3.2 f = 1KHz 1.5 2 f = 1KHz 220 330 f = 1KHz 18 30 30 60 µs µs 2.7 4.5 4.5 8.5 KΩ KΩ 10 10 -4 -4 Min. Typ . Max. Un it h re Reverse Voltage Ratio hf e Small Signal Current Gain Output Admittance hoe ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 3/5 BC857/BC858 SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 4/5 BC857/BC858 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede a...

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