Maker : Inchange Semiconductor
Part No. : BUY52A

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Product Information

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUY52A DESCRIPTION ·High Current Capability ·Fast Switching Speed ·Low Saturation Voltage and High Gain APPLICATIONS Designed for use in high frequency and efficiency converters such as motor controllers and industrial equipment such as: ·Switching regulators ·Motor control ·High frequency and efficiency converters Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM www.DataSheet4U.com PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 60 UNIT V Collector Current-Continuous Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range w ww scs .i 60 7 V V 30 A 45 8 150 200 -65~200 A A W ℃ ℃ .cn mi e PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.17 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat) ICBO IEBO hFE fT PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 0.1A; IB= 0 IE= 1mA; IC= 0 IC= 20A; IB= 2A IC= 30A; IB= 3A IC= 30A; IB= 3A VCB= 60V; IE= 0 VEB= 5V; IC= 0 MIN 60 7 TYP. BUY52A MAX UNIT V V 1.0 1.5 2.0 V V V mA mA Current-Gain—Bandwidth Product www.DataSheet4U.com w w .i w IC= 15A; VCE= 4V IC= 1A ; VCE= 15V sem sc .cn i 20 0.1 0.1 150 10 MHz isc Website：www.iscsemi.cn ...

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