Maker : Philips Semiconductors
Part No. : BYV25G-600

Datasheet PDF : BYV25G-600.pdf
Cross Reference : BYV25G-600 Cross Reference
Buy Component : BYV25G-600 Find Stock and Price

Shortcut : BYV25G-600 

Product Information

BYV25G-600 Ultrafast rectifier diode Rev. 01 — 4 February 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Ultrafast epitaxial rectifier diode in a SOT226 (I2PAK) plastic package. 1.2 Features and benefits Fast switching High thermal cycling performance Low forward voltage drop Low profile package facilitates compact/slim designs Low switching losses Low thermal resistance Soft recovery minimizes power-consuming oscillations 1.3 Applications Discontinuous Current Mode (DCM) Power Factor Correction (PFC) High frequency switched-mode power supplies 1.4 Quick reference data Table 1. VRRM IF(AV) Quick reference Conditions Min square-wave pulse; δ = 0.5; Tmb ≤ 135 °C; see Figure 1 and 2 IF = 1 A; VR ≥ 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; see Figure 5 Typ Max 600 5 Unit V A repetitive peak reverse voltage average forward current Symbol Parameter Dynamic characteristics trr reverse recovery time 50 60 ns NXP Semiconductors www.DataSheet4U.com BYV25G-600 Ultrafast rectifier diode 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol n.c. K A K Description not connected cathode anode mounting base; cathode 1 2 3 003aad550 Simplified outline Graphic symbol 1 2 3 SOT226A (I2PAK) 3. Ordering information Table 3. Ordering information Package Name BYV25G-600 I2PAK Description plastic single-ended package (I2PAK); TO-262 Version SOT226A Type number 4. Limiting values Table 4. Symbol VRRM VRWM VR IF(AV) IFRM IFSM Tstg Tj Limiting values Parameter repetitive peak reverse voltage crest working reverse voltage reverse voltage average forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature Tmb ≤ 100 °C; DC square-wave pulse; δ = 0.5; Tmb ≤ 135 °C; see Figure 1 and 2 square-wave pulse; δ = 0.5; Tmb ≤ 135 °C tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C Conditions Min -40 Max 600 600 600 5 10 66 60 150 150 Unit V V V A A A A °C °C In accordance with the Absolute Maximum Rating System (IEC 60134). BYV25G-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 4 February 2010 2 of 11 NXP Semiconductors www.DataSheet4U.com BYV25G-600 Ultrafast rectifier diode 10 Ptot (W) 003aac347 8 Ptot (W) 003aac348 δ=1 8 6 6 0.2 4 0.1 0.5 a = 1.57 1.9 2.2 2.8 4.0 4 2 2 0 0 2 4 6 IF(AV) (A) 0 8 0 2 4 IF(AV) (A) 6 Fig 1. Forward power dissipation as a function of average forward current; square waveform; maximum values Fig 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values BYV25G-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 4 February 2010 3 of 11 NXP Semiconductors www.DataSheet4U.com BYV25G-600 Ultrafast rectifier diode 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient free air Conditions with heatsink compound; see Figure 3 Min Typ 60 Max 2.5 Unit K/W K/W 10 Zth(j-mb) (K/W) 1 001aag913 10−1 P δ= tp T 10−2 tp t T 10−3 10−6 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse width BYV25G-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 4 February 2010 4 of 11 NXP Semiconductors www.DataSheet4U.com BYV25G-600 Ultrafast rectifier diode 6. Characteristics Table 6. Symbol VF IR Characteristics Parameter forward voltage reverse current Conditions IF = 5 A; see Figure 4 IF = 5 A; Tmb ≤ 150 °C; see Figure 4 VR =...

Link URL