Maker : Philips Semiconductors
Part No. : BYV29G-600

Datasheet PDF : BYV29G-600.pdf
Cross Reference : BYV29G-600 Cross Reference
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Product Information

BYV29G-600 Ultrafast rectifier diode Rev. 01 — 4 February 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Ultrafast epitaxial rectifier diode in a SOT226 (I2PAK) plastic package 1.2 Features and benefits Fast switching High thermal cycling performance Low forward voltage drop Low on-state losses Low profile package facilitating compact designs Low thermal resistance Soft recovery minimizes power-consuming oscillations 1.3 Applications Discontinuous Current Mode (DCM) Power Factor Correction (PFC) Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data Table 1. VRRM IF(AV) Quick reference Conditions Min square-wave pulse; δ = 0.5; Tmb ≤ 123 °C; see Figure 1 and 2 tp = 25 µs; δ = 0.5 Typ Max 600 9 Unit V A repetitive peak reverse voltage average forward current Symbol Parameter IFRM repetitive peak forward current reverse recovery time - - 18 A Dynamic characteristics trr IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; see Figure 5 IF = 8 A; Tj = 150 °C; see Figure 4 50 60 ns Static characteristics VF forward voltage 0.97 1.11 V NXP Semiconductors www.DataSheet4U.com BYV29G-600 Ultrafast rectifier diode 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol n.c. K A K Description no connection cathode anode mounting base; cathode 1 2 3 003aad550 Simplified outline Graphic symbol 1 2 3 SOT226A (I2PAK) 3. Ordering information Table 3. Ordering information Package Name BYV29G-600 I2PAK Description plastic single-ended package (I2PAK); TO-262 Version SOT226A Type number 4. Limiting values Table 4. Symbol VRRM VRWM VR IF(AV) IFSM Tstg Tj IFRM Limiting values Parameter repetitive peak reverse voltage crest working reverse voltage reverse voltage average forward current non-repetitive peak forward current storage temperature junction temperature repetitive peak forward current tp = 25 µs; δ = 0.5 DC square-wave pulse; δ = 0.5; Tmb ≤ 123 °C; see Figure 1 and 2 tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C Conditions Min -40 Max 600 600 600 9 77 70 150 150 18 Unit V V V A A A °C °C A In accordance with the Absolute Maximum Rating System (IEC 60134). BYV29G-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 4 February 2010 2 of 11 NXP Semiconductors www.DataSheet4U.com BYV29G-600 Ultrafast rectifier diode 20 Ptot (W) 15 0.5 10 0.1 003aab480 δ=1 12 Ptot (W) 10 2.2 8 4.0 2.8 003aab481 a = 1.57 1.9 0.2 6 4 5 2 0 0 5 10 IF(AV) (A) 15 0 0 3 6 IF(AV) (A) 9 Fig 1. Forward power dissipation as a function of average forward current; square waveform; maximum values Fig 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values BYV29G-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 4 February 2010 3 of 11 NXP Semiconductors www.DataSheet4U.com BYV29G-600 Ultrafast rectifier diode 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient free air Conditions with heatsink compound; see Figure 3 Min Typ 60 Max 2.5 Unit K/W K/W 10 Zth(j-mb) (K/W) 1 001aag913 10−1 P δ= tp T 10−2 tp t T 10−3 10−6 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse width BYV29G-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 4 February 2010 4 of 11 NXP Semiconductors www.DataSheet4U.com BYV29G-600 Ultrafast rectifier diode 6. Characteristics Table 6. Symbol V...

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