Maker : Fairchild Semiconductor
Part No. : C5305D

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Product Information

www.DataSheet4U.com KSC5305D KSC5305D High Voltage High Speed Power Switch Application • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time spread even though corner spirit product • Low base drive requirement B Equivalent Circuit C 1 E TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25°C) Junction Temperature Storage Temperature Value 800 400 12 5 10 2 4 75 150 - 65 ~ 150 Units V V V A A A A W °C °C Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Rθja Thermal Resistance Characteristics Junction to Case Junction to Ambient Rating 1.65 62.5 Unit °C/W ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 www.DataSheet4U.com KSC5305D Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob tON tSTG tF tSTG tF VF trr Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Turn ON Time Storage Time Fall Time Storage Time Fall Time Diode Forward Voltage * Reverse recovery time (di/dt = 10A/µs) Test Condition IC=1mA, IE=0 IC=5mA, IB=0 IE=1mA, IC=0 VCB=500V, IE=0 VEB = 9V, IC = 0 VCE=1V, IC=0.8A VCE=1V,IC=2A IC=0.8A, IB=0.08A IC=2A, IB=0.4A IC=0.8A, IB=0.08A IC=2A, IB=0.4A VCB = 10V, f=1MHz VCC=300V, IC =2A IB1 = 0.4A, IB2=-1A RL = 150Ω VCC=15V,VZ=300V IC = 2A,IB1 = 0.4A IB2 = -0.4A, LC=200µH IF = 1A IF = 2A IF = 0.4A IF = 1A IF = 2A Min. 800 400 12 22 8 Typ. 800 1.4 1.9 Max. 10 10 0.4 0.5 1.0 1.0 75 150 2 0.2 2.25 150 1.5 1.6 V V V V pF ns µs µs µs ns V V ns µs µs Units V V V µA µA *Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10% ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 www.DataSheet4U.com KSC5305D Typical Characteristics 5 IC[A], COLLECTOR CURRENT 4 hFE, DC CURRENT GAIN 3 IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA 100 Ta = 125 C 25 C -25 C o o o VCE = 1V 10 2 IB = 50mA 1 IB = 0 0 0 1 2 3 4 5 6 7 8 9 10 1 0.01 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 o 10 VCE = 5V IC = 10 IB Ta = 125 C hFE, DC CURRENT GAIN 25 C -20 C o o 1 V BE(sat) 10 V CE(sat) 0.1 1 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 10 10 IC = 5IB IC = 5IB VCE(sat)[V], SATURATION VOLTAGE 25 C 1 VBE[V], SATURATION VOLTAGE o Ta = 125 C 0.1 o 1 -20 C 25 C Ta = 125 C o o o -20 C o 0.01 0.01 0.1 1 10 0.1 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 5. Collector-Emitter Saturation Voltage Figure 6. Base-Emitter Saturation Voltage ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 www.DataSheet4U.com KSC5305D Typical Characteristics (Continued) 10 1000 VCC = 300V IC = 5IB1 = -2.5IB2 f = 1MHz 1 Cob[pF], CAPACITANCE tSTG tSTG, tF [µs], TIME 100 tF 0.1 10 0.01 0.1 1 1 10 1 10 100 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 7. Switching Time Figure 8. Collector Output Capacitance 1.6 10 trr[µs], REVERSE RECOVERY TIME 1.4 1.2 VF[V], FORWARD DIODE VOLTAGE 1.0 1.5 2.0 1 1.0 0.8 0.1 0.01 0.1 1 10 If...

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