Maker : Philips Semiconductors
Part No. : C945P

Datasheet PDF : C945P.pdf
Cross Reference : C945P Cross Reference
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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D186 2PC945 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 26 1999 May 28 www.DataSheet4U.com Philips Semiconductors Product specification NPN general purpose transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 50 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-92 (SOT54) plastic package. PNP complement: 2PA733. 1 handbook, halfpage 2PC945 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 3 2 1 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).s SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 60 50 5 100 200 100 500 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 May 28 2 www.DataSheet4U.com Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE hFE VCEsat VBEsat VBE Cc Ce fT F PARAMETER collector cut-off current emitter cut-off current DC current gain DC current gain 2PC945P collector-emitter saturation voltage IC = 100 mA; IB = 10 mA base-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = 100 mA; IB = 10 mA IC = 1 mA; VCE = 6 V IE = ie =0; VCB = 6 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ f = 1 kHz, B = 200 Hz CONDITIONS IE = 0; VCB = 60 V IC = 0; VEB = 5 V IC = 0.1 mA; VCE = 6 V IC = 1 mA; VCE = 6 V 200 − − 600 − − − − − − − − 11 − − MIN. − − 50 TYP. − − − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 250 2PC945 UNIT K/W MAX. 100 100 − 400 300 1.1 700 4 − 450 15 UNIT nA nA mV V mV pF pF MHz dB IC = 10 mA; VCE = 6 V; f = 100 MHz 150 1999 May 28 3 www.DataSheet4U.com Philips Semiconductors Product specification NPN general purpose transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads 2PC945 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 May 28 4 www.DataSheet4U.com Philips Semiconductors Product specification NPN general purpose transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values 2PC945 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting ...

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