Maker : Infineon Technologies
Part No. : D04S60

  Datasheet PDF : D04S60.pdf
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Product Information

www.DataSheet4U.com Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 800W 1) • No forward recovery P-TO220-2-2. SDP04S60, SDD04S60 SDT04S60 Product Summary VRRM Qc IF P-TO252-3-1. 600 13 4 P-TO220-3-1. V nC A Type SDP04S60 SDD04S60 SDT04S60 Package P-TO220-3-1. P-TO252-3-1. P-TO220-2-2. Ordering Code Q67040-S4369 Q67040-S4368 Q67040-S4445 Marking D04S60 D04S60 D04S60 Pin 1 n.c. PIN 2 C PIN 3 A n.c. A C C Value 4 5.6 12.5 18 40 0.78 600 600 36.5 A Unit A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp=10ms IF IFRMS Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX ∫i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature A²s V W °C -55... +175 Page 1 2004-02-11 www.DataSheet4U.com Final data SDP04S60, SDD04S60 SDT04S60 Values min. typ. 35 max. 4.1 62 62 75 50 K/W Unit Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: P-TO263-3-2: @ min. footprint P-TO263-3-2: @ 6 cm2 cooling area 2) P-TO252-3-1: @ min. footprint P-TO252-3-1: @ 6 cm2 cooling area 2) Symbol RthJC RthJA RthJA - Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF=4A, Tj=25°C IF=4A, Tj=150°C Symbol min. VF IR - Values typ. max. Unit V 1.7 2 15 40 1.9 2.4 µA 200 1000 Reverse current V R=600V, T j=25°C V R=600V, T j=150°C 1CCM, V = 85VAC, T = 150°C, T =100°C, η = 93%, ∆ I = 30% IN j C IN 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2004-02-11 www.DataSheet4U.com Final data SDP04S60, SDD04S60 SDT04S60 Unit max. nC ns pF 150 10 7 - Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Total capacitive charge V R=400V, IF=4A, diF/dt=200A/µs, T j=150°C typ. 13 n.a. Qc trr C - Switching time V R=400V, IF=4A, diF/dt=200A/µs, T j=150°C Total capacitance V R=0V, T C=25°C, f=1MHz V R=300V, T C=25°C, f=1MHz V R=600V, T C=25°C, f=1MHz Page 3 2004-02-11 www.DataSheet4U.com Final data SDP04S60, SDD04S60 SDT04S60 1 Power dissipation Ptot = f (TC) 40 2 Diode forward current IF = f (TC) parameter: Tj≤175 °C 4.5 W A 30 3.5 3 Ptot IF 2.5 2 1.5 1 0.5 0 0 25 20 15 10 5 0 0 20 40 60 80 100 120 140 °C 180 TC 20 40 60 80 100 120 140 °C 180 TC 3 Typ. forward characteristic IF = f (VF) parameter: Tj , tp = 350 µs 8 4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100°C, d = tp/T 18 A -40°C 25°C 100°C 125°C 150°C W 6 14 PF(AV) 12 10 IF 5 4 8 3 6 2 4 2 0 0 1 d=0.1 d=0.2 d=0.5 d=1 0 0 0.5 1 1.5 2 2.5 V VF 3.5 1 2 3 4 5 A 7 IF(AV) Page 4 2004-02-11 www.DataSheet4U.com Final data SDP04S60, SDD04S60 SDT04S60 5 Typ. reverse current vs. reverse voltage I R=f(VR) 10 2 6 Transient thermal impedance ZthJC = f (t p) parameter : D = t p/T 10 1 SDP04S60 µA 10 1 K/W 10 0 10 0 ZthJC 10 -1 IR 10 -1 25°C 100°C 125°C 150°C D = 0.50 10 -2 0.20 0.10 single pulse 0.05 0.02 0.01 10 -2 10 -3 10 -3 100 200 300 400 V VR 600 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage C= f(V R) parameter: TC = ...

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