Maker : RF Micro Devices
Part No. : D10040200PL1

  Datasheet PDF : D10040200PL1.pdf
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Product Information

D10040200P L1 451000MHz GaAs/GaN Pwr Dblr Hybrid D10040200PL1 45-1000MHz GaAs/GaN PWR DBLR HYBRID Package: SOT-115J www.DataSheet4U.com Product Description The D10040200PL1 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT and GaN HEMT die and is operated from 45MHz to 1000MHz. It provides high output capability, excellent linearity, and superior return loss performance with low noise and optimal reliability. Features      +VB Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT   INPUT OUTPUT    Low Current Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Extremely Low Noise Unconditionally Stable Under All Terminations High Output Capability 20.0dB Min. Gain at 1GHz 380mA Max. at 24VDC 45MHz to 1000MHz CATV Amplifier Systems Applications    GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Parameter Overall Power Gain Slope [1] Flatness of Frequency Response Input Return Loss Min. 18.5 20.0 1.0 20 19 18 16 20 19 18 17 Specification Typ. 19.0 20.5 1.5 Max. 19.5 21.5 2.5 0.8 Unit dB dB dB Condition VB = 24V; TMB =30°C; ZS =ZL =75 f=45MHz f=1000MHz f=45MHz to 1000MHz dB f=45MHz to 1000MHz (Peak to Valley) dB f=45MHz to 320MHz dB f=320MHz to 640MHz dB f=640MHz to 870MHz dB f=870MHz to 1000MHz Output Return Loss dB f=45MHz to 320MHz dB f=320MHz to 640MHz dB f=640MHz to 870MHz dB f=870MHz to 1000MHz Noise Figure 3.0 4.0 dB f=50MHz to 1000MHz Total Current Consumption (DC) 370.0 380.0 mA 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS091124 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 4 D10040200PL1 Absolute Maximum Ratings Parameter RF Input Voltage (single tone) DC Supply Over-Voltage (5 minutes) Storage Temperature Operating Mounting Base Temperature www.DataSheet4U.com Rating 65 30 -40 to +100 -30 to +100 Unit dBmV V °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Distortion data 40MHz to 550MHz CTB Min. Specification Typ. Max. Unit Condition VB =24V, TMB =30°C, ZS =ZL =75 79 ch 7dB tilted; VO =50dBmV at 550MHz, plus 75 digital channels (-6dB offset)[2] XMOD -65 -62 dBc 79 ch 7dB tilted; VO =50dBmV at 550MHz, plus 75 digital channels (-6dB offset)[2] CSO -71 -68 dBc 79 ch 7dB tilted; VO =50dBmV at 550MHz, plus 75 digital channels (-6dB offset)[2] CIN 59 63 dB 79 ch 7dB tilted; VO =50dBmV at 550MHz, plus 75 digital channels (-6dB offset)[2] 2. 79 analog channe...

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