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METAL GATE RF SILICON FETMaker : Seme LAB
Shortcut : D1001UK D1002UK D1003UK D1004 D10040180GT D10040180GTH D10040200GT D10040200GTH D10040200PL1 D10040220GT D10040220GTH D10040230P1 D10040230PL1 D10040240GT D10040240GTH D10040250GT D10040250GTH D10040270GT D10040270GTH D1004UK D1005 D1005UK D1005UK D1006UK D1007UK D1008UK D1009UK |
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Product Information |
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TetraFET D1005UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN F G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DM PIN 1 PIN 3 SOURCE SOURCE PIN 2 PIN 4 DRAIN GATE DIM A B C D E F G H I J K M mm 24.76 18.42 45° 6.35 3.17 Dia. 5.71 12.7 Dia. 6.60 0.13 4.32 3.17 26.16 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975 0.725 45° 0.25 0.125 Dia. 0.225 0.500 Dia. 0.260 0.005 0.170 0.125 1.03 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010 • HIGH GAIN – 16 dB MINIMUM APPLICATIONS • HF/VHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 146W 70V ±20V 20A –65 to 150°C 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 6/99 D1005UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 80W VDS = 28V f = 175MHz VDS = 0 VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.4A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 4A 1 3.2 16 50 20:1 70 Typ. Max. Unit V 2 1 7 mA µA V S dB % — 240 100 10 pF pF pF VGS(th) Gate Threshold Voltage * VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 1.2°C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 6/99 D1005UK 140 120 100 P out W 90 80 70 60 Drain Efficiency P out W 140 120 100 80 60 40 20 0 18 17 16 15 Gain 14 dB 80 60 40 20 0 VDS = 28V IDQ = 0.4A f = 175MHz 50 % 40 30 20 VDS = 28V IDQ = 0.4A f = 175MHz 0 1 2 3 4 5 6 7 Pout Gain 13 12 11 0 1 2 3 4 5 6 7 8 9 8 9 P in W Pout Drain Efficiency P in W Figure 1 – Power Output and Efficiency vs. Power Input. -10 -15 -20 IMD3 dBc Figure 2 – Power Output & Gain vs. Power Input. D1005UK OPTIMUM SOURCE AND LOAD IMPEDANCE VDS = 28V f1 = 175.0MHz f2 = 175.1MHz IDQ = 0.4A 0 20 40 60 P out W PEP -25 -30 -35 -40 -45 -50 80 100 Idq = 0.4A 120 Frequency MHz 175MHz ZS Ω 3 + j1 ZL Ω 3 - j2.5 Figure 3 – IMD vs. Output Power. Typical S Parameters ! # !Freq MHz 50 100 150 200 250 300 350 400 450 500 VDS = 28V, IDQ = 0.3A MHZ S MA R 50 S11 mag 0.95 0.94 0.94 0.93 0.94 0.95 0.96 0.96 0.97 0.98 ang -58 -79 -104 -124 -140 -152 -161 -169 -177 177 S21 mag 4.29 3.32 2.26 1.59 1.2 0.94 0.72 0.59 0.46 0.35 ang 94 81 65 53 41 34 22 19 11 -2 S12 mag 0.006 0.006 0.01 0.019 0.031 0.042 0.052 0.064 0.073 0.091 ang 34 57 98 107 103 102 92 91 84 82 S22 mag 0.66 0.75 0.84 0.88 0.92 0.93 0.96 0.98 1.00 1.00 ang -162 -164 -169 -175 -180 176 170 164 159 154 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 6/99 D1005UK +28V Gate-Bias 10kΩ 1nF 10nF 1... |
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