Maker : Seme LAB
Part No. : D1019

  Datasheet PDF : D1019.pdf
  Cross Reference : D1019 Cross Reference
  Buy Component : D1019 Find Stock and Price

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Product Information

TetraFET D1019UK METAL GATE RF SILICON FET MECHANICAL DATA C 1 2 4 3 A GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED B FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS D G H • LOW Crss • SIMPLE BIAS CIRCUITS E F PIN 1 PIN 3 DRAIN GATE PIN 2 PIN 4 SOURCE SOURCE • LOW NOISE • HIGH GAIN – 16 dB MINIMUM DIM A B C D E F G H mm 26.16 5.72 45° 7.11 0.13 1.52 0.43 7.67 Tol. 0.13 0.13 5° 0.13 0.02 0.13 0.20 REF Inches 1.030 0.225 45° 0.280 0.005 0.55 0.060 0.120 Tol. 0.015 0.005 5° 0.005 0.001 0.005 0.008 REF APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 50W 70V ±20V 5A –65 to 150°C 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 6/99 D1019UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 20W VDS = 28V f = 175MHz VDS = 28V VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.1A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 1A 1 0.8 16 50 20:1 70 Typ. Max. Unit V 1 1 7 mA µA V S dB % — 60 30 2.5 pF pF pF VGS(th) Gate Threshold Voltage* VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 3.5°C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 6/99 D1019UK 45 40 35 30 P out W 90 80 70 60 50 40 Efficiency % 45 40 35 30 P out W 19 18 17 16 15 14 13 VDS = 28V ZDQ = 0.1A f = 175MHz 12 11 10 0 0.25 0.5 0.75 1 P in W Gain dB 25 20 15 10 5 0 0 0.25 0.5 0.75 1 P in W 25 20 15 10 5 0 1.25 1.5 1.75 Pout Gain VDS = 28V ZDQ = 0.1A f = 175MHz 30 20 10 0 1.25 1.5 1.75 2 2 Pout Drain Efficiency Figure 1 – Power Output and Efficiency vs. Power Input. -10 -15 -20 IMD3 dBc Figure 2 – Power Output & Gain vs. Power Input. D1019UK OPTIMUM SOURCE AND LOAD IMPEDANCE Frequency MHz 175MHz 40 -25 -30 -35 -40 -45 0 5 10 15 20 25 30 35 P out W PEP IDQ = 0.1A IDQ = 0.5A VDS = 28V f1 = 175.0MHz f2 = 175.1MHz ZS Ω 5 + j14 ZL Ω 12 – j14 Figure 3 – IMD vs. Output Power. Typical S Parameters ! # !Freq MHz 50 100 150 200 250 300 350 400 450 500 550 600 VDS = 28V, IDQ = 0.1A MHZ S MA R 50 S11 mag 0.780 0.775 0.795 0.826 0.853 0.878 0.903 0.923 0.944 0.963 0.978 0.985 ang -116 -135 -149 -159 -169 -179 171 161 151 142 136 131 S21 mag 18 9.312 6.077 4.193 3.216 2.566 1.991 1.655 1.322 1.121 0.899 0.762 ang 112 85 68 53 43 35 23 18 9 4 -2 -7 S12 mag 0.034 0.030 0.022 0.017 0.023 0.039 0.052 0.070 0.080 0.098 0.108 0.119 ang 25 11 14 44 74 89 86 84 80 76 72 66 S22 mag 0.642 0.577 0.613 0.669 0.715 0.759 0.801 0.839 0.878 0.914 0.945 0.966 ang -85 -103 -116 -128 -139 -150 -161 -173 177 167 159 153 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 6/99 D1019UK 15 +28V Gate-Bias 10K L4 100nF 10nF 10K D1019UK...

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