Maker : Seme LAB
Part No. : D1020UK

  Datasheet PDF : D1020UK.pdf
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Product Information

TetraFET D1020UK METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) B G (typ) 2 1 H D 3 P (2 pls) A 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 400MHz PUSH–PULL FEATURES • EXTRA LOW Crss E (4 pls) F I N M O J K • SIMPLIFIED AMPLIFIER DESIGN DRAIN 1 GATE 2 DR PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N O P Millimetres 19.05 10.77 45° 9.78 5.71 27.94 1.52R 10.16 22.22 0.13 2.72 1.70 5.08 34.03 1.57R Tol. 0.50 0.13 5° 0.13 0.13 0.13 0.13 0.13 MAX 0.02 0.13 0.13 0.50 0.13 0.08 PIN 2 PIN 4 • SUITABLE FOR BROAD BAND APPLICATIONS • SIMPLE BIAS CIRCUITS Inches 0.75 0.424 45° 0.385 0.225 1.100 0.060R 0.400 0.875 0.005 0.107 0.067 0.200 1.340 0.062R Tol. 0.020 0.005 5° 0.005 0.005 0.005 0.005 0.005 MAX 0.001 0.005 0.005 0.020 0.005 0.003 • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 11/00 Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 389W 70V ±20V 20A –65 to 150°C 200°C D1020UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS VGS(th) gfs GPS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 150W VDS = 28V f = 400MHz IDQ = 2A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 5A 1 4 10 50 20:1 VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 70 Typ. Max. Unit V 5 1 7 mA mA V S dB % — TOTAL DEVICE h VSWR Ciss Coss Crss PER SIDE VDS = 28V VDS = 28V 300 150 10 pF pF pF Reverse Transfer Capacitance VDS = 28V * Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 0.45°C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 11/00 D1020UK      3RXW :    (IILFLHQF       9GV 9 ,GT $      0+] 0+]  9GV 9 ,GT $      0+] 0+]   3LQ: 3RXW: Figure 1. Output Power Vs Input Power Figure 2. Efficiency Vs. Output Power     *DLQ G%             0+] 0+]  9GV 9 ,GT $ 3RXW: Figure 3. Gain Vs Output Power Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 11/00 D1020UK                       =6RSW               ,PSHGDQFHPHDVXUHGJDWHWRJDWH       0DWFKLQJ 1HWZRUN Optimum Source Impedence              =/RSW                 ,PSHGDQFHPHDVXUHGGUDLQWRGUDLQ   Optimum Load Impedence Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk             I 0+]       =/ 5   ...

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