Maker : Seme LAB
Part No. : D1023

  Datasheet PDF : D1023.pdf
  Cross Reference : D1023 Cross Reference
  Buy Component : D1023 Find Stock and Price

Shortcut : D1020  D1020UK  D1021UK  D1022  D1022UK  D1023  D1023UK  D1027UK  D1028  D1028UK  D1029UK 

Product Information

TetraFET D1023UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I F M K J N • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DT PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN DIM A B C D E F G H I J K M N mm 6.35 DIA 3.17 DIA 18.41 5.46 5.21 7.62 21.59 3.94 12.70 0.13 24.76 2.59 4.06 Tol. 0.13 0.13 0.25 0.13 0.13 MAX 0.38 0.13 0.13 0.03 0.13 0.13 0.25 Inches 0.250 DIA 0.125 DIA 0.725 0.215 0.205 0.300 0.850 0.155 0.500 0.005 0.975 0.102 0.160 Tol. 0.005 0.005 0.010 0.005 0.005 MAX 0.015 0.005 0.005 0.001 0.005 0.005 0.010 GATE SOURCE (COMMON) • HIGH GAIN – 16 dB MINIMUM APPLICATIONS • HF/VHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 117W 70V ±20V 15A –65 to 150°C 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.3/00 D1023UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 60W VDS = 28V f = 175MHz VDS = 28V VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.3A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 3A 1 2.4 16 50 20:1 70 Typ. Max. Unit V 3 1 7 mA mA V S dB % — VGS(th) Gate Threshold Voltage * h VSWR Load Mismatch Tolerance Ciss Coss Crss 180 90 7.5 pF pF pF * Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 1.5°C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.3/00 ...

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