Maker : Seme LAB
Part No. : D1028UK

  Datasheet PDF : D1028UK.pdf
  Cross Reference : D1028UK Cross Reference
  Buy Component : D1028UK Find Stock and Price

Shortcut : D1028UK 

Product Information

TetraFET D1028UK METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) B G (typ) 2 1 H D 3 P (2 pls) A 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN E (4 pls) F I N M O J K • SUITABLE FOR BROAD BAND APPLICATIONS DRAIN 1 GATE 2 DR PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N O P Millimetres 19.05 10.77 45° 9.78 5.71 27.94 1.52R 10.16 22.22 0.13 2.72 1.70 5.08 34.03 1.57R Tol. 0.50 0.13 5° 0.13 0.13 0.13 0.13 0.13 MAX 0.02 0.13 0.13 0.50 0.13 0.08 PIN 2 PIN 4 • LOW Crss • SIMPLE BIAS CIRCUITS Inches 0.75 0.424 45° 0.385 0.225 1.100 0.060R 0.400 0.875 0.005 0.107 0.067 0.200 1.340 0.062R Tol. 0.020 0.005 5° 0.005 0.005 0.005 0.005 0.005 MAX 0.001 0.005 0.005 0.020 0.005 0.003 • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 438W 70V ±20V 30A –65 to 150°C 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 01/01 D1028UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS VGS(th) gfs Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Gate Threshold Voltage Matching Between Sides VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V ID = 10mA ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 6A VDS = VGS 1 4.8 70 Typ. Max. Unit V 6 1 7 mA mA V mhos VGS(th)match 0.1 V TOTAL DEVICE GPS Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance h PO = 300W VDS = 28V f = 175MHz IDQ = 2A 13 60 20:1 VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 360 180 15 dB % — pF pF pF VSWR Ciss Coss Crss PER SIDE VDS = 28V VDS = 28V Reverse Transfer Capacitance VDS = 28V * Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 0.4°C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 01/01 D1028UK 400 350 300 250 P out 100 90 80 70 Drain Efficiency 400 350 300 250 P out f = 175MHz Idq = 2A Vds = 28V 20 18 Gain 200 W 60 % 200 W 16 dB 150 f = 175MHz 50 Idq = 2A Vds = 28V 150 100 50 0 0 2 4 6 8 10 P in W Pout Gain 100 50 0 0 2 4 6 8 10 P in W Pout Drain Efficiency 40 30 18 20 20 14 12 14 16 12 14 16 18 12 20 2nd harmonic = -28dBc 3rd harmonic = -40dBc output at 350W Figure 1 – Power Output and Efficiency vs. Power Input. Figure 2 – Power Output & Gain vs. Power Input. 400 350 300 250 P out 100 90 80 70 Drain Efficiency IMD dBc -20 18.5 -30 17.5 Gain dB 200 W 60 % 150 100 50 0 0 2 4 6 8 10 P in W Pout Drain Efficiency 50 40 30 12 14 16 18 20 20 -40 16.5 -50 0 0.5 IMD3 IMD5 Gain 1 Idq A 1.5 2 15.5 2.5 f1 = 175.0 MHz f2 = 175.1 MHz VDS = 28V f1 = 175.0MHz f2 = 175.1MHz Pout = 130W PEP Vds = 28V Figure 3 – IMD vs. Output Power. Figure 4 – IMD & Gain vs. Idq Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 01/01 D1028UK Typical S Parameters ! # !Freq !MHz 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 1...

Link URL