Maker : STMicroelectronics
Part No. : D10PF06

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www.DataSheet4U.com ® STD10PF06 P - CHANNEL 60V - 0.18 Ω - 10A TO-252 STripFET™ POWER MOSFET TYPE STD10PF06 s s s s s V DSS 60 V R DS(o n) < 0.20 Ω ID 10 A s TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s MOTOR CONTROL s DC-DC & DC-AC CONVERTERS DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR VGS ID ID I DM (•) P tot dv/dt T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at T c = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. Operating Junction Temperature o o Value 60 60 ± 20 10 7 40 40 0.27 6 -65 to 175 175 Unit V V V A A A W W /o C V/ns o o C C (•) Pulse width limited by safe operating area ( 1) ISD ≤ 10 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed April 1999 1/8 www.DataSheet4U.com STD10PF06 THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature F or Soldering Purpose Max Max T yp 3.75 100 1.5 275 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 25V) Max Value 10 50 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V GS = 0 Min. 60 1 10 ± 100 Typ. Max. Unit V µA µA nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 20 V T c = 125 oC ON (∗) Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V Test Con ditions ID = 250 µA ID = 5 A 10 Min. 2 Typ. 3.4 0.18 Max. 4 0.20 Unit V Ω A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s (∗) C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz ID = 5 A V GS = 0 Min. 2 Typ. 5 850 230 75 Max. Unit S pF pF pF 2/8 www.DataSheet4U.com STD10PF06 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr Qg Q gs Q gd Parameter Turn-on Delay T ime Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 30 V ID = 6 A R G = 4.7 Ω V GS = 10 V (Resistive Load, see fig. 3) V DD = 48 V ID = 12 A V GS = 10 V Min. Typ. 20 40 16 4 6 21 Max. Unit ns ns nC nC nC SWITCHING OFF Symbo l t d(of f) tf tr (Voff) tf tc Parameter Turn-off Delay T ime Fall T ime Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions V DD = 30 V ID = 6 A V GS = 10 V R G = 4.7 Ω (Resistive Load, see fig. 3) V DD = 48 V I D = 12 A V GS = 10 V R G = 4.7 Ω (Induct ive Load, see fig. 5) Min. Typ. 40 10 10 17 30 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Rev...

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