Maker : Shindengen Electric Mfg.Co.Ltd
Part No. : D10SC4M

  Datasheet PDF : D10SC4M.pdf
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Product Information

SHINDENGEN Schottky Rectifiers (SBD) Dual D10SC4M 40V 10A FEATURES •œTj150•Ž OUTLINE DIMENSIONS Case : ITO-220 Unit : mm •œ RRSM avalanche guaranteed P •œ Fully Isolated Molding APPLICATION •œ Switching power supply •œ DC/DC converter •œ Home Appliances, Office Equipment •œ Telecommunication RATINGS •œAbsolute Maximum Ratings (If not specified Tc=25•Ž) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40•`150 •Ž Operating Junction Temperature Tj 150 •Ž Maximum Reverse Voltage V RM 40 V Repetitive Peak Surge ReverseVRRSM Voltage Pulse width 0.5ms, duty 1/40 45 V Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, 10 I O Tc=123•Ž A Peak Surge Forward Current IFSM50Hz sine wave, Non-repetitive 1 cycle peak value, 100 Tj=125•Ž A Repetitive Peak Surge ReversePRRSM Power Pulse width 10ƒÊs, Rating of per diode, Tj= 25•Ž 330 W Dielectric Strength Vdis Terminals to case, AC 1 minute 1.5 kV Mounting Torque TOR (Recommended torque•0.3N¥m) F 0.5 N¥m •œElectrical Characteristics (If not specified Tc=25•Ž) Item Symbol Conditions Ratings Unit Forward Voltage V I =5A, F F Pulse measurement, Rating of per diode Max.0.55 V IR V=V , Pulse measurement, Rating of per diode Max. 3.5 mA Reverse Current R RM Junction Capacitance =10V, Rating of per diode Cj f=1MHz,R V Typ.180 pF ƒÆjc junction to case Max.3.3 Thermal Resistance ƒÆcf case to heatsink, Mounting torque=0.5N¥m Max.1.5 •Ž/W ƒÆjf junction to heatsink Max.4.8 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D10SC4M Forward Voltage 10 Forward Current IF [A] Tc=150°C [MAX] Tc=150°C [TYP] Tc=25°C [MAX] Tc=25°C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] D10SC4M Junction Capacitance f=1MHz Tc=25°C TYP per diode 1000 Junction Capacitance Cj [pF] 100 0.1 1 10 Reverse Voltage VR [V] D10SC4M 1000 Reverse Current Tc=150°C [MAX] 100 Tc=150°C [TYP] Reverse Current IR [mA] Tc=125°C [TYP] 10 Tc=100°C [TYP] 1 Tc=75°C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] D10SC4M 20 Reverse Power Dissipation DC Reverse Power Dissipation PR [W] D=0.05 15 0.1 0.2 0.3 10 0.5 5 SIN 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150°C 0 VR tp D=tp /T T D10SC4M 10 Forward Power Dissipation DC Forward Power Dissipation PF [W] D=0.8 8 0.3 6 0.05 4 0.2 0.1 SIN 0.5 2 0 0 2 4 6 8 10 12 14 16 Average Rectified Forward Current IO [A] Tj = 150°C IO 0 tp D=tp /T T D10SC4M 20 Derating Curve Average Rectified Forward Current IO [A] DC 15 D=0.8 0.5 10 SIN 0.3 0.2 5 0.1 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = 20V 0 0 IO VR tp D=tp /T T D10SC4M 20 Derating Curve Average Rectified Forward Current IO [A] DC 15 D=0.8 0.5 10 SIN 0.3 0.2 5 0.1 0.05 0 0 20 40 60 80 100 120 140 160 Heatsink Temperature Tf [°C] VR = 20V 0 0 IO VR tp D=tp /T T D10SC4M 200 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 150 non-repetitive, sine wave, Tj=125°C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR 0.5IRP 0 tp PRRSM = IRP × VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10µs) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [µs] IRP IR 0.5IRP 0 tp PRRSM = IRP × VRP VR VRP ...

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