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Search -----> 2SD1113Maker : Hitachi Semiconductor
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2SD1113(K) Silicon NPN Triple Diffused www.datasheet4u.com Application Igniter Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 6 kΩ (Typ) 450 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings 300 300 7 6 10 40 150 –55 to +150 Unit V V V A A W °C °C 2SD1113(K) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter sustain voltage www.datasheet4u.com Emitter to base breakdown Symbol V(BR)CBO VCEO(sus) V(BR)EBO I CEO hFE VCE(sat) VBE(sat) t on t off Min 300 300 7 — 500 — — — — Typ — — — — — — — 2.0 23 Max 500 — — 100 — 1.5 2.0 — — Unit V V V µA Test conditions I C = 0.1 mA, IE = 0 I C = 3 A, PW = 50 µs, f = 50 Hz, L = 10 mH I E = 50 mA, IC = 0 VCE = 300 V, RBE = ∞ VCE = 2 V, IC = 4 A*1 I C = 4 A, IB = 40 mA*1 I C = 4 A, IB = 40 mA*1 I C = 4 A, IB1 = –IB2 = 40 mA I C = 4 A, IB1 = –IB2 = 40 mA voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test. V V µs µs Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 50 10 Area of Safe Operation iC (peak) IC (max) 40 Collector current IC (A) ms =1 ms ion rat PW = 10 pe PW DC O 1.0 20 0.1 Ta = 25°C 1 shot pulse 0 50 100 Case temperature TC (°C) 150 0.01 0.005 0.5 1.0 2 5 10 20 50 100200 500 Collector to emitter voltage VCE (V) 2 2SD1113(K) DC Current Transfer Ratio vs. Collector Current 10,000 DC current transfer ratio hFE 5,000 °C 75 25 Typical Output Characteristics 5 Collector current IC (A) 4 TC = 25°C 1.0 0.8 0.6 0.4 0.2 mA 2,000 TC = 3 www.datasheet4u.com 2 1,000 500 –2 5 1 200 100 0.1 VCE = 2 V Pulse IB = 0 0 1 2 3 4 5 Collector to emitter voltage VCE (V) 0.2 0.5 1.0 2 5 Collector current IC (A) 10 Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) Saturation Voltage vs. Collector Current 10 5 lC = 200 lB TC = 25°C Pulse VBE (sat) 2 1.0 0.5 VCE (sat) 0.2 0.1 0.1 0.2 0.5 1.0 2 5 Collector current IC (A) 10 3 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 -0.08 +0.1 4.44 ± 0.2 1.26 ± 0.15 18.5 ± 0.5 15.0 ± 0.3 1.27 www.datasheet4u.com 6.4 +0.2 –0.1 2.7 MAX 14.0 ± 0.5 1.5 MAX 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have www.datasheet4u.com received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hit... |
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