Maker : Seme LAB
Part No. : D1207UK

  Datasheet PDF : D1207UK.pdf
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Product Information

TetraFET D1207UK METAL GATE RF SILICON FET MECHANICAL DATA B H C 2 3 1 A D G E 5 4 F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN J K I N M O • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DQ PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 DRAIN 1 GATE 2 DIM mm A 16.38 B 1.52 C 45° D 6.35 E 3.30 F 14.22 G 1.27 x 45° H 1.52 I 6.35 J 0.13 K 2.16 M 1.52 N 5.08 O 18.90 Tol. 0.26 0.13 5° 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.13 0.13 MAX 0.13 Inches 0.645 0.060 45° 0.250 0.130 0.560 0.05 x 45° 0.060 0.250 0.005 0.085 0.060 0.200 0.744 Tol. 0.010 0.005 5° 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.005 0.005 MAX 0.005 • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 175W 40V ±20V 10A –65 to 150°C 200°C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 10/95 D1207UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS VGS(th) gfs GPS η VSWR Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance VGS = 0 VDS = 12.5V VGS = 20V ID = 10mA VDS = 10V PO = 20W VDS = 12.5V f = 400MHz IDQ = 0.8A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 1A 1 0.8 10 50 20:1 VGS = –5V f = 1MHz f = 1MHz f = 1MHz 40 Typ. Max. Unit V 1 1 7 mA µA V S dB % — 60 40 4 pF pF pF TOTAL DEVICE PER SIDE VDS = 0 VDS = 12.5V VGS = 0 Reverse Transfer Capacitance VDS = 12.5V VGS = 0 Pulse Duration = 300 µs , Duty Cycle ≤ 2% * Pulse Test: HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 1.75°C / W Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 10/95 ...

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