Maker : Panasonic Semiconductor
Part No. : D1266A

  Datasheet PDF : D1266A.pdf
  Cross Reference : D1266A Cross Reference
  Buy Component : D1266A Find Stock and Price

Shortcut : D1266  D1266A 

Product Information

Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Unit: mm 0.7±0.1 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage www.DataSheet4U.com (Emitter open) 2SD1266 2SD1266A VCEO VEBO IC ICP TC = 2 5 °C PC Tj Tstg Symbol VCBO Rating 60 80 60 80 6 3 5 35 2.0 150 −55 to +150 °C °C V A A W V Unit V 16.7±0.3 φ 3.1±0.1 Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 14.0±0.5 0.8±0.1 Collector-emitter voltage 2SD1266 (Base open) 2SD1266A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 2.54±0.3 5.08±0.5 123 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) 2SD1266 2SD1266A 2SD1266 2SD1266A IEBO hFE1 * hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf ICEO 2SD1266 2SD1266A VBE ICES VCE = 4 V, IC = 3 A VCE = 60 V, VBE = 0 VCE = 80 V, VBE = 0 VCE = 30 V, IB = 0 VCE = 60 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A IC = 3 A, IB = 0.375 A VCE = 10 V, IC = 0.5 A, f = 10 MHz IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 mA VCC = 50 V 30 0.5 2.5 0.4 70 10 1.2 V MHz µs µs µs Symbol VCEO Conditions IC = 30 mA, IB = 0 Min 60 80 1.8 200 200 300 300 1 320 mA  µA V µA Typ Max Unit V Emitter-base cutoff current (Collector open) Forward current transfer ratio Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 70 to 150 P 120 to 250 O 160 to 320 Publication date: April 2003 SJD00283BED 1 2SD1266, 2SD1266A PC  Ta 50 (1) TC = Ta (2) With a 100 × 100 × 2 mm Al heat sink (3) With a 50 × 50 × 2 mm Al heat sink (4) Without heat sink (PC = 2 W) 5 TC = 25°C 25°C TC = 100°C −25°C IC  VCE 8 IC  VBE VCE = 4 V Collector power dissipation PC (W) 40 (1) 30 4 Collector current IC (A) 3 90 mA 80mA 70 mA 60 mA 50 mA 40 mA 30 mA 20 mA Collector current IC (A) IB = 100 mA 6 4 20 2 10 (2) (3) (4) 2 1 10 mA 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 2.4 www.DataSheet4U.com Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 100 IC/IB = 8 hFE  IC 104 VCE = 4 V fT  I C 104 VCE = 5 V f = 10 MHz TC = 25˚C Forward current transfer ratio hFE 10 TC = 100˚C 25˚C 1 –25°C 0.1 103 TC = 100˚C 25°C Transition frequency fT (MHz) 1 10 103 102 −25°C 102 10 10 0.01 0.01 0.1 1 10 1 0.01 0.1 1 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Safe operation area 100 Non repetitive pulse TC = 25˚C 103 Rth  t (1) Without heat sink (2) With a 100 × 100 × 2 mm Al heat sink (1) Thermal resistance Rth (°C/W) 102 Collector current IC (A) 10 ICP IC t = 1ms 10 ms DC 10 (2) 1 1 0.1 2SD1266A 2SD1266 10–1 0.01 1 10 100 1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector-emitter voltage VCE (V) Time t (s) 2 SJD00283BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and cont...

Link URL