Maker : Panasonic Semiconductor
Part No. : D1267

  Datasheet PDF : D1267.pdf
  Cross Reference : D1267 Cross Reference
  Buy Component : D1267 Find Stock and Price

Shortcut : D1260  D1260UK  D1263A  D1266  D1266A  D1267  D1267  D126A  D126A  D126CT 

Product Information

Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB942 and 2SB942A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.5 +0.2 –0.1 0.8±0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q 7.5±0.2 Solder Dip 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1267 2SD1267A 2SD1267 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings 60 80 60 80 5 8 4 40 2 150 –55 to +150 Unit V emitter voltage 2SD1267A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 16.7±0.3 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1267 2SD1267A 2SD1267 2SD1267A 2SD1267 2SD1267A (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCB = 60V, VBE = 0 VCB = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 4A, IB = 0.4A VCE = 5V, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 0.4A, IB2 = – 0.4A, VCC = 50V 20 0.4 1.2 0.5 60 80 70 15 2 1.5 V V MHz µs µs µs 250 min typ max 400 400 700 700 1 Unit µA µA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification 70 to 150 120 to 250 Q P www.DataSheet4U.com hFE1 Rank 1 Power Transistors PC — Ta 50 6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 5 IB=150mA 2SD1267, 2SD1267A IC — VCE 8 VCE=4V 7 25˚C TC=100˚C –25˚C IC — VBE Collector power dissipation PC (W) Collector current IC (A) Collector current IC (A) 20 40 (1) 100mA 4 80mA 60mA 3 40mA 30mA 2 20mA 10mA 1 5mA 0 6 5 4 3 2 1 0 30 20 10 (2) (3) (4) 0 0 20 40 60 80 100 120 140 160 0 4 8 12 16 0 0.4 0.8 1.2 1.6 2.0 2.4 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100˚C 10000 hFE — IC 10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03 fT — IC VCE=10V f=1MHz TC=25˚C Forward current transfer ratio hFE 1000 300 100 –25˚C 30 10 3 1 0.01 0.03 25˚C TC=100˚C 25˚C –25˚C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25˚C Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 10 ICP 3 IC 1 0.3 0.1 0.03 0.01 1 3 10 30 10ms DC t=1ms 102 10 (2) 1 2SD1267A 2SD1267 10–1 100 300 1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 ...

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