Maker : Panasonic Semiconductor
Part No. : D1275A

  Datasheet PDF : D1275A.pdf
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Product Information

Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type darlington For power amplification Complementary to 2SB0949 and 2SB0949A • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 0.7±0.1 www.DataSheet4U.com Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 ■ Features φ 3.1±0.1 4.2±0.2 Solder Dip (4.0) 14.0±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD1275 2SD1275A VCEO VEBO IC ICP TC = 25°C PC Tj Tstg Symbol VCBO Rating 60 80 60 80 5 2 4 35 2.0 150 −55 to +150 °C °C V A A W V Unit V 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 5.08±0.5 Collector-emitter voltage 2SD1275 (Base open) 2SD1275A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package Internal Connection C B ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SD1275 2SD1275A 2SD1275 2SD1275A IEBO hFE1 hFE2 * Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf ICEO 2SD1275 2SD1275A VBE ICBO VCE = 4 V, IC = 2 A VCB = 60 V, IE = 0 VCB = 80 V, IE = 0 VCE = 30 V, IB = 0 VCE = 40 V, IB = 0 VEB = 5 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 2 A IC = 2 A, IB = 8 mA VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 2 A, IB1 = 8 mA, IB2 = −8 mA, VCC = 50 V 20 0.5 4.0 1.0 1 000 1 000 Symbol VCEO Conditions IC = 30 mA, IB = 0 Min 60 80 Typ E Max Unit V 2.8 1 1 2 2 2 V mA mA Emitter-base cutoff current (Collector open) Forward current transfer ratio mA  10 000 2.5 V MHz µs µs µs Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 R 1 000 to 2 500 Q P 2 000 to 5 000 4 000 to 10 000 Publication date: February 2003 SJD00189BED 1 2SD1275, 2SD1275A PC  Ta 50 IC  VCE 5 10 TC=25˚C www.DataSheet4U.com IC  VBE Collector power dissipation PC (W) 40 (1) Collector current IC (A) Collector current IC (A) (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W) VCE=4V 4 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA 8 25˚C TC=100˚C –25˚C 30 3 6 20 2 4 10 (2) (3) (4) 1 2 0 0 40 80 120 160 0 0 1 2 3 4 5 6 0 0 0.8 1.6 2.4 3.2 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 100 IC/IB=250 hFE  IC VCE=4V Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 104 IE=0 f=1MHz TC=25˚C 105 Forward current transfer ratio hFE 10 25˚C 104 TC=100˚C 103 1 TC=–25˚C 100˚C 103 25˚C –25˚C 102 0.1 102 10 0.01 0.01 0.1 1 10 10 0.01 0.1 1 10 1 0.1 1 10 100 Collector current IC (A) Collector current IC (A) Collector-base voltage VCB (V) Safe operation area 100 Non repetitive pulse TC=25˚C Rth  t 103 (1)Without heat sink (2)With a 100×100×2mm Al heat sink Thermal resistance Rth (°C/W) 102 (1) Collector current IC (A) 10 ICP IC t=10ms t=1ms DC 10 (2) 1 1 0.1 2SD1275A 2SD1275 10−1 0.01 1 10 100 1 000 10−2 10−4 10−3 10−2 10−1 1 10 102 103 104 Collector-emitter voltage VCE (V) Time t (s) 2 SJD00189BED www.DataSheet4U.com Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any...

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