Maker : Panasonic Semiconductor
Part No. : D1276

  Datasheet PDF : D1276.pdf
  Cross Reference : D1276 Cross Reference
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Shortcut : D1275A  D1276 

Product Information

Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type darlington 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 For power amplification Complementary to 2SB0950 and 2SB0950A ■ Features • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 7.5±0.2 φ 3.1±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage www.DataSheet4U.com (Emitter open) 2SD1276 2SD1276A VCEO VEBO IC ICP TC = 25°C PC Tj Tstg Symbol VCBO Rating 60 80 60 80 5 4 8 40 2.0 150 −55 to +150 °C °C V A A W 1 2 3 4.2±0.2 Unit V Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 14.0±0.5 0.8±0.1 2.54±0.3 Collector-emitter voltage 2SD1276 (Base open) 2SD1276A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature V 5.08±0.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package Internal Connection C B ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SD1276 2SD1276A 2SD1276 2SD1276A IEBO hFE1 hFE2 Collector-emitter saturation voltage * E Conditions Min 60 80 2.5 200 200 500 500 2 1 000 1 000 10 000 2.0 4.0 20 0.5 4.0 1.0 MHz µs µs µs V mA  µA Typ Max Unit V Symbol 2SD1276 2SD1276A VBE ICBO ICEO VCEO IC = 30 mA, IB = 0 VCE = 3 V, IC = 3 A VCB = 60 V, IE = 0 VCB = 80 V, IE = 0 VCE = 30 V, IB = 0 VCE = 40 V, IB = 0 VEB = 5 V, IC = 0 VCE = 3 V, IC = 0.5 A VCE = 3 V, IC = 3 A IC = 3 A, IB = 12 mA IC = 5 A, IB = 20 mA VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 3 A, IB1 = 12 mA, IB2 = −12 mA, VCC = 50 V V µA Emitter-base cutoff current (Collector open) Forward current transfer ratio VCE(sat)1 VCE(sat)2 fT ton tstg tf Transition frequency Turn-on time Storage time Fall time Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 R 1 000 to 2 500 Q P 2 000 to 5 000 4 000 to 10 000 SJD00190BED Publication date: February 2003 1 2SD1276, 2SD1276A PC  Ta 50 IC  VCE 10 10 TC=25˚C IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA IC  VBE VCE=3V Collector power dissipation PC (W) 40 (1) Collector current IC (A) Collector current IC (A) (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W) 8 8 25˚C 30 6 6 TC=100˚C –25˚C 20 4 4 10 (2) (3) (4) 2 2 0 0 40 80 120 160 0 0 2 4 6 8 10 0 0 0.8 1.6 2.4 3.2 Ambient temperature Ta (°C) www.DataSheet4U.com Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 100 IC/IB=250 hFE  IC VCE=3V Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 104 IE=0 f=1MHz TC=25˚C 105 Forward current transfer ratio hFE TC=100˚C 10 25˚C 104 25˚C –25˚C 103 1 TC=100˚C –25˚C 103 102 0.1 102 10 0.01 0.01 0.1 1 10 10 0.01 0.1 1 10 1 0.1 1 10 100 Collector current IC (A) Collector current IC (A) Collector-base voltage VCB (V) Safe operation area 100 Non repetitive pulse TC=25˚C Rth  t 103 (1)Without heat sink (2)With a 100×100×2mm Al heat sink Thermal resistance Rth (°C/W) 102 (1) Collector current IC (A) 10 ICP IC t=10ms t=1ms 10 (2) 1 DC 1 0.1 2SD1276A 2SD1276 10−1 0.01 1 10 100 1 000 10−2 10−4 10−3 10−2 10−1 1 10 102 103 104 Collector-emitter voltage VCE (V) Time t (s) 2 SJD00190BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese G...

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