Maker : STMicroelectronics
Part No. : D12NF06

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N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET™ II POWER MOSFET TYPE STD12NF06 www.DataSheet4U.com s TYPICAL s s s STD12NF06 VDSS 60 V RDS(on) <0.1 Ω ID 12 A s RDS(on) = 0.08Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") 3 2 1 IPAK TO-251 (Suffix “-1”) DPAK TO-252 (Suffix “T4”) 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL , AUDIO AMPLIFIERS s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(•) Ptot dv/dt (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 60 60 ± 20 12 8.5 48 30 0.2 15 140 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °C EAS (2) Tstg Tj (•) Pulse width limited by safe operating area. December 2001 . (1) ISD ≤12A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting T j = 25 oC, ID = 6A, VDD = 30V 1/10 STD12NF06 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 5 100 275 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS www.DataSheet4U.com Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 100°C VGS = ± 20 V Min. 60 Typ. Max. Unit V IDSS IGSS 1 10 ±100 µA µA nA ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 µA ID = 6 A Min. 2 Typ. 3 0.08 Max. 4 0.1 Unit V Ω DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 6 A Min. Typ. 5 315 70 30 Max. Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 2/10 STD12NF06 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd www.DataSheet4U.com Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 6 A VDD = 30 V RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) VDD = 48V ID = 12A VGS= 10V Min. Typ. 7 18 10 3.0 3.5 Max. Unit ns ns 12 nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 6 A VDD = 30 V RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. 17 6 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (•) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A VGS = 0 50 65 3.5 Test Conditions Min. Typ. Max. 12 48 1.3 Unit A A V ns µC A di/dt = 100A/µs ISD = 12 A VDD = 30 V Tj = 150°C (see test circuit, Figure 5) (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/10 STD12NF06 Output Characteristics Transfer Characteristics www.DataSheet4U.com Transconductance Static Drain-source On ...

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