Maker : AUK
Part No. : DN100S

Datasheet PDF : DN100S.pdf
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www.DataSheet4U.com Semiconductor DN100S NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.15V Typ. @IC /IB =400mA/20mA) • Suitable for low voltage large current drivers • Complementary pair with DP100S • Switching Application Ordering Information Type NO. DN100S Marking N03 Package Code SOT-23F Outline Dimensions 2.4±0.1 1.6±0.1 unit : mm 1 2.9±0.1 1.90 BSC 3 2 0.15±0.05 0.4±0.05 PIN Connections 1. Base 2. Emitter 3. Collector KST-2117-000 0.9±0.1 0~0.1 1 www.DataSheet4U.com DN100S (Ta=25° C) Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj T stg Ratings 15 12 5 1 200 150 -55~150 Unit V V V A mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25° C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) fT C ob Test Condition IC=50µA, I E =0 IC=1mA, IB =0 IE =50µA, IC =0 VCB=12V, IE =0 VEB =5V, I C=0 VCE=1V, IC =100mA VCE=1V, IC =1A IC=400mA, IB =20mA IC=400mA, IB =20mA VCE=5V, IC =50mA VCB=10V, IE =0, f=1MHz Min. 15 12 5 200 70 - Typ. 260 5 Max. 0.1 0.1 450 0.25 1.2 - Unit V V V µA µA V V MHz pF KST-2117-000 2 www.DataSheet4U.com DN100S Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC - VBE Fig. 3 hFE- IC Fig. 4 VCE(sat)-IC KST-2117-000 3 ...

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