Maker : Dynex Semiconductor
Part No. : DS2002SF

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Product Information

DS2002SF DS2002SF Rectifier Diode Replaces September 2001 version, DS4178-5.0 DS4178-5.1 December 2001 APPLICATIONS s Rectification s Freewheel Diode s DC Motor Control s Power Supplies s Welding s Battery Chargers KEY PARAMETERS VRRM 1800V IF(AV) 2996A IFSM 41250A FEATURES s Double Side Cooling s High Surge Capability VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V Conditions DS2002SF18 1800 DS2002SF17 1700 DS2002SF16 1600 DS2002SF15 1500 DS2002SF14 1400 DS2002SF13 1300 Lower voltage grades available. VRSM = VRRM + 100V Outline type code: F See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS2002SF16 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DS2002SF CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 2996 4707 4122 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 2093 3288 2693 A A A Tcase = 100oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 2320 3644 3300 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 1345 2110 1630 A A A 2/7 www.dynexsemi.com DS2002SF SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 175oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 175oC VR = 0 Max. 33.0 5.44 x 106 41.25 8.5 x 106 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 19.5kN with mounting compound Forward (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 18.0 175 200 22.0 o Min. dc Anode dc - Max. 0.022 0.038 0.052 0.004 0.008 185 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN 3/7 www.dynexsemi.com DS2002SF CHARACTERISTICS Symbol VFM IRRM QS IRR VTO rT Parameter Forward voltage Peak reverse current Total stored charge Peak recovery current Threshold voltage Slope resistance Conditions At 3400A peak, Tcase = 25oC At VRRM, Tcase = 175oC IF = 2000A, dIRR/dt = 3A/µs Tcase = 175˚C, VR = 100V At Tvj = 175˚C At Tvj = 175˚C Min. Max. 1.18 50 1500 90 0.74 0.088 Units V mA µC A V mΩ CURVES 8000 Measured under pulse conditions 6000 5000 Instantaneous forward current, IF - (A) 6000 Mean power dissipation - (W) Tj = 175˚C 4000 4000 Tj = 25˚C 3000 2000 2000 1000 0 0.5 1.0 1.5 Instantaneous forward voltage, VF - (V) 2.0 0 0 dc Half wave 3 phase 6 phase 1000 2000 3000 4000 Mean forward current, IF(AV) - (A) 5000 Fig.2 Maximum (limit) forward characteristics VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF Where Fig.3 Dissipation curves A = –0.64773 B = 0.268581 C = 0.00016 D = –0.01796 these values are valid for Tj = 125˚C for IF 500A to 8000A 4/7 www.dynexsemi.com DS2002SF 10000 Conditions: Tj = 175˚C VR = 100V IF = 2000A 1000 Conditions: Tj = 175˚C VR = 100V IF = 2000A Reverserecovery current, Irr - (A) IF QS dIF/dt IRM Stored charge, QS - (µC) 1000 100 100 0.1 1.0 10 Rate of decay of forward current, dIF/dt - (A/µs) 100 10 1.0 10 Rate of decay of forward current dIF/dt - (A/µs) 100 F...

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