Maker : Dynex Semiconductor
Part No. : DS2004SF

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Product Information

DS2004SF DS2004SF Rectifier Diode Replaces September 2001 version, DS4188-5.0 DS4188-5.1 December 2001 APPLICATIONS s Rectification s Freewheel Diode s DC Motor Control s Power Supplies s Welding s Battery Chargers KEY PARAMETERS VRRM 2800V IF(AV) 2372A IFSM 31250A FEATURES s Double Side Cooling s High Surge Capability VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V 2800 2700 2600 2500 2400 Conditions DS2004SF28 DS2004SF27 DS2004SF26 DS2004SF25 DS2004SF24 VRSM = VRRM + 100V Outline type code: F See Package Details for further information. Fig. 1 Package outline Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS2004SF26 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DS2004SF CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 2372 3726 3352 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 1684 2645 2235 A A A Tcase = 100oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, 1960 3077 2750 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 1300 2040 1600 A A A 2/7 www.dynexsemi.com DS2004SF SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 175oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 175oC VR = 0 Max. 25.0 3.12 x 106 31.25 4.88 x 106 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 19.5kN with mounting compound Forward (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force –55 18.0 175 180 22.0 o Min. dc Anode dc - Max. 0.022 0.038 0.052 0.004 0.008 185 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN 3/7 www.dynexsemi.com DS2004SF CHARACTERISTICS Symbol VFM IRRM QS IRR VTO rT Parameter Forward voltage Peak reverse current Total stored charge Peak recovery current Threshold voltage Slope resistance Conditions At 3400A peak, Tcase = 25oC At VRRM, Tcase = 175oC IF = 2000A, dIRR/dt = 3A/µs, Tcase = 175˚C, VR = 100V At Tvj = 175˚C At Tvj = 175˚C Min. Max. 1.3 50 2500 105 0.82 0.16 Units V mA µC A V mΩ CURVES 5000 Measured under pulse conditions 5000 4000 Instantaneous forward current, IF - (A) 4000 3000 2000 Tj = 175˚C Tj = 25˚C 1000 Mean power dissipation - (W) 3000 2000 1000 dc Half wave 3 phase 6 phase 0 0.5 1.0 1.5 Instantaneous forward voltage, VF - (V) 2.0 0 0 1000 2000 3000 Mean forward current, IF(AV) - (A) 4000 Fig.2 Maximum (limit) forward characteristics VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF Where Fig.3 Dissipation curves A = –0.23148 B = 0.203801 C = 0.00023 D = –0.0443 these values are valid for Tj = 125˚C for IF 500A to 5000A 4/7 www.dynexsemi.com DS2004SF 100000 Conditions: Tj = 175˚C VR = 100V IF = 2000A 1000 IF QS dIF/dt Conditions: Tj = 175˚C VR = 100V IF = 2000A Reverse recovery current, Irr - (A) IRM Stored charge, QS - (µC) 10000 100 1000 1.0 10 Rate of decay of forward current, dIF/dt - (A/µs) 100 10 0.1 1.0 10 Rate of decay of forward current, dIF/dt - (A/µs) 100 Fig.4 Total ...

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