Maker : National Semiconductor
Part No. : DS2003

  Datasheet PDF : DS2003.pdf
  Cross Reference : DS2003 Cross Reference
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Product Information

DS2003 DS9667 DS2004 High Current Voltage Darlington Drivers December 1995 DS2003 DS9667 DS2004 High Current Voltage Darlington Drivers General Description The DS2003 DS9667 DS2004 are comprised of seven high voltage high current NPN Darlington transistor pairs All units feature common emitter open collector outputs To maximize their effectiveness these units contain suppression diodes for inductive loads and appropriate emitter base resistors for leakage The DS2003 DS9667 has a series base resistor to each Darlington pair thus allowing operation directly with TTL or CMOS operating at supply voltages of 5 0V The DS2004 has an appropriate input resistor to allow direct operation from CMOS or PMOS outputs operating from supply voltages of 6 0V to 15V The DS2003 DS9667 DS2004 offer solutions to a great many interface needs including solenoids relays lamps small motors and LEDs Applications requiring sink currents beyond the capability of a single output may be accommodated by paralleling the outputs Features Y Y Y Y Y Y Seven high gain Darlington pairs High output voltage (VCE e 50V) High output current (IC e 350 mA) TTL PMOS CMOS compatible Suppression diodes for inductive loads Extended temperature range Connection Diagram Order Numbers J Package Number J16A N Package Number N16E DS2003TN DS2003CN DS9667TN DS9667CN M Package Number M16A DS2003TM DS2003CM 16-Lead DIP DS2003 DS9667 DS2003MJ DS2003TJ DS2003CJ DS9667MJ DS9667TJ DS9667CJ DS2004MJ DS2004TJ DS2004CJ DS2004 DS2004TN DS2004CN DS2004TM DS2004CM TL F 9647 – 1 Top View C1996 National Semiconductor Corporation TL F 9647 RRD-B30M66 Printed in U S A Absolute Maximum Ratings (Note 1) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Storage Temperature Range Ceramic DIP Molded DIP Operating Temperature Range DS2003M DS9667M DS2004M DS2003T DS9667T DS2004T DS2003C DS9667C DS2004C b 65 C to a 175 C b 65 C to a 150 C b 55 C to b 55 C to b 40 C to b 40 C to a 125 C a 125 C a 105 C a 105 C Lead Temperature Ceramic DIP (Soldering 60 seconds) Molded DIP (Soldering 10 seconds) Maximum Power Dissipation at 25 C Cavity Package Molded Package S O Package 300 C 265 C 2016 mW 1838 mW 926 mW Derate cavity package 16 13 mW C above 25 C derate molded DIP package 14 7 mW C above 25 C Derate S O package 7 4 mW C 0 C to a 85 C 0 C to a 85 C Input Voltage Output Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Min Typ 30V 55V 6 0V 500 mA 25 mA Max 20 100 500 1 25 11 09 16 13 11 1 35 05 1 45 mA 24 27 30 V mA V mA Units Electrical Characteristics TA e 25 C Symbol ICEX Parameter Output Leakage Current unless otherwise specified (Note 2) Conditions TA e 25 C VCE e 50V (Figure 1a) TA e 85 C VCE e 50V (Figure 1a) for Commercial Grade TA e 25 C VCE e 50V VI e 1 0V (Figure 1b) DS2004 IC e 350 mA IB e 500 mA (Figure 2) (Note 3) IC e 200 mA IB e 350 mA (Figure 2) IC e 100 mA IB e 250 mA (Figure 2) VI e 3 85V (Figure 3) VI e 5 0V (Figure 3) VI e 12V (Figure 3) TA e 85 C for Commercial IC e 500 mA (Figure 4) VCE e 2 0V IC e 200 mA (Figure 5) VCE e 2 0V IC e 250 mA (Figure 5) VCE e 2 0V IC e 300 mA (Figure 5) VCE e 2 0V IC e 125 mA (Figure 5) VCE e 2 0V IC e 200 mA (Figure 5) VCE e 2 0V IC e 275 mA (Figure 5) VCE e 2 0V IC e 350 mA (Figure 5) DS2004 DS2003 DS9667 DS2003 DS9667 DS2004 VCE(Sat) Collector-Emitter Saturation Voltage II(ON) Input Current 0 93 0 35 10 50 100 II(OFF) VI(ON) Input Current (Note 4) Input Voltage (Note 5) 50 60 70 80 15 30 10 10 pF ms ms mA mA V CI tPLH tPHL IR VF Input Capacitance Turn-On Delay Turn-Off Delay Clamp Diode Leakage Current Clamp Diode Forward Voltage 0 5 VI to 0 5 VO 0 5 VI to 0 5 VO VR e 50V (Figure 6) IF e 350 mA (Figure 7) TA e 25 C TA e 85 C 50 100 17 20 Note 1 ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed They are not mean...

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