Maker : Dynex Semiconductor
Part No. : DS2007SF

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Product Information

DS2007SF DS2007SF Rectifier Diode Replaces September 2001 version, DS4189-4.0 DS4189-4.1 December 2001 FEATURES s Double Side Cooling s High Surge Capability KEY PARAMETERS VRRM 4000V IF(AV) 1594A IFSM 25000A APPLICATIONS s Rectification s Freewheel Diode s DC Motor Control s Power Supplies s Welding s Battery Chargers VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V Conditions DS2007SF40 4000 DS2007SF39 3900 DS2007SF38 3800 DS2007SF37 3700 DS2007SF36 3600 DS2007SF35 3500 Lower voltage grades available. VRSM = VRRM + 100V Outline type code: F See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS2007SF36 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DS2007SF CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 1594 2504 2295 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 1144 1797 1553 A A A Tcase = 100oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 1225 1923 1720 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 820 1287 1050 A A A 2/7 www.dynexsemi.com DS2007SF SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 150oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 150oC VR = 0 Max. 20.0 2.0 x 106 25.0 3.125 x 106 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 19.5kN with mounting compound Forward (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 18.0 150 175 22.0 o Min. dc Anode dc - Max. 0.022 0.038 0.052 0.004 0.008 160 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN 3/7 www.dynexsemi.com DS2007SF CHARACTERISTICS Symbol VFM IRRM QS IRR VTO rT Parameter Forward voltage Peak reverse current Total stored charge Peak recovery current Threshold voltage Slope resistance Conditions At 3400A peak, Tcase = 25oC At VRRM, Tcase = 150oC IF = 2000A, dIRR/dt = 3A/µs, Tcase = 150˚C, VR = 100V At Tvj = 150˚C At Tvj = 150˚C Min. Max. 1.6 75 3500 110 0.82 0.29 Units V mA µC A V mΩ CURVES 5000 Measured under pulse conditions 4000 4000 Instantaneous forward current, IF - (A) 3000 Mean power dissipation - (W) 3000 Tj = 25˚C Tj = 150˚C 2000 2000 1000 dc Half wave 3 phase 6 phase 1000 0 0.5 1.0 1.5 2.0 0 0 Instantaneous forward voltage, VF - (V) 1000 2000 Mean forward current, IF(AV) - (A) 3000 Fig.2 Maximum (limit) forward characteristics VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF Where Fig.3 Dissipation curves A = 0.658789 B = –0.01706 C = 0.000194 D = 0.010358 these values are valid for Tj = 125˚C for IF 500A to 5000A 4/7 www.dynexsemi.com DS2007SF 10000 1000 Conditions: Tj = 150˚C VR = 100V IF = 2000A Conditions: Tj = 150˚C VR = 100V IF = 2000A Reverse recovery current Irr - (A) IF QS dIF/dt IRM Stored charge, QS - (µC) 1000 100 100 0.1 1.0 10 100 10 0.1 1.0 10 100 Rate of decay of on-state current, dIF/dt - (A/µs) Rate of decay of forward current, dIF/dt - (A/µs) Fig.4 T...

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