Maker : Dynex
Part No. : DS2009SF

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Product Information

DS2009SF DS2009SF Rectifier Diode Replaces September 2001 version, DS4190-4.0 DS4190-4.1 December 2001 FEATURES s Double Side Cooling s High Surge Capability KEY PARAMETERS VRRM 4800V IF(AV) 1428A IFSM 20500A APPLICATIONS s Rectification s Freewheel Diode s DC Motor Control s Power Supplies s Welding s Battery Chargers VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V Conditions DS2009SF48 4800 DS2009SF47 4700 DS2009SF46 4600 DS2009SF45 4500 DS2009SF44 4400 DS2009SF43 4300 Lower voltage grades available. VRSM = VRRM + 100V Outline type code: F See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS2009SF47 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DS2009SF CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 1428 2242 2082 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 1033 1622 1424 A A A Tcase = 100oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 1105 1735 1580 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 730 1145 960 A A A 2/7 www.dynexsemi.com DS2009SF SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 150oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 150oC VR = 0 Max. 16.5 1.35 x 106 20.5 2.125 x 106 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 19.5kN with mounting compound Forward (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 18.0 150 175 22.0 o Min. dc Anode dc - Max. 0.022 0.038 0.052 0.004 0.008 160 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN 3/7 www.dynexsemi.com DS2009SF CHARACTERISTICS Symbol VFM IRRM QS IRM VTO rT Parameter Forward voltage Peak reverse current Total stored charge Peak recovery current Threshold voltage Slope resistance Conditions At 3400A peak, Tcase = 25oC At VRRM, Tcase = 150oC IF = 2000A, dIRR/dt = 3A/µs, Tcase = 150˚C, VR = 100V At Tvj = 150˚C At Tvj = 150˚C Min. Max. 1.8 75 4000 115 0.84 0.383 Units V mA µC A V mΩ CURVES 5000 4000 Measured under pulse conditions 4000 Instantaneous forward current, IF - (A) 3000 Mean power dissipation - (W) Tj = 25˚C 3000 Tj = 150˚C 2000 2000 1000 dc Half wave 3 phase 6 phase 1000 0 0.5 1.0 1.5 2.0 Instantaneous forward voltage, VF - (V) 2.5 0 0 1000 2000 3000 Mean forward current, IF(AV) - (A) Fig.2 Maximum (limit) forward characteristics VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF Where Fig.3 Dissipation curves A = 0.290476 B = 0.06449 C = 0.000335 D = 0.00408 these values are valid for Tj = 125˚C for IF 500A to 5000A 4/7 www.dynexsemi.com DS2009SF 10000 Conditions: Tj = 150˚C VR = 100V IF = 2000A Peak half sine forward current - (kA) 30 ^ I2t = I2 x t 2 25 1.4 1.3 Stored charge, QS - (µC) 20 1.2 I2t value - (A2s x 106) 1000 15 I2t 10 1.1 1.0 IF QS dIF/dt 5 0.9 100 0.1 IRM 1.0 10 Rate of decay of on-state current, dIF/dt - (A/µs) 100 0 1 ms 10 1 2 3 5 10 20 0.8 50 ...

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