Maker : Dynex Semiconductor
Part No. : DS2012SF

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Product Information

DS2012SF DS2012SF Rectifier Diode Replaces September 2001 version, DS4191-4.0 DS4548 -4.1 December 2001 FEATURES s Double Side Cooling s High Surge Capability KEY PARAMETERS VRRM 6000V IF(AV) 1320A IFSM 16500A APPLICATIONS s Rectification s Freewheel Diode s DC Motor Control s Power Supplies s Welding s Battery Chargers VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V Conditions DS2012SF60 6000 DS2012SF59 5900 DS2012SF58 5800 DS2012SF57 5700 DS2012SF56 5600 DS2012SF55 5500 Lower voltage grades available. VRSM = VRRM + 100V Outline type code: F See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS2012SF59 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DS2012SF CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 1320 2073 1897 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 947 1487 1283 A A A Tcase = 100oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 100oC Tcase = 100oC Tcase = 100oC 1015 1594 1480 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 100oC Tcase = 100oC Tcase = 100oC 680 1067 920 A A A 2/7 www.dynexsemi.com DS2012SF SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 150oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 150oC VR = 0 Max. 13.5 0.92 x 106 16.5 1.425 x 106 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 19.5kN with mounting compound Forward (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force –55 18.0 150 175 22.0 o Min. dc Anode dc - Max. 0.022 0.038 0.052 0.004 0.008 160 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN 3/7 www.dynexsemi.com DS2012SF CHARACTERISTICS Symbol VFM IRRM QS IRR VTO rT Parameter Forward voltage Peak reverse current Total stored charge Peak recovery current Threshold voltage Slope resistance Conditions At 3400A peak, Tcase = 25oC At VRRM, Tcase = 150oC IF = 2000A, dIRR/dt = 3A/µs, Tcase = 150˚C, VR = 100V At Tvj = 150˚C At Tvj = 150˚C Min. Max. 2.1 75 4500 120 1.0 0.42 Units V mA µC A V mΩ CURVES 5000 Measured under pulse conditions Mean power dissipation - (W) 3000 4000 Instantaneous forward current IF - (A) Tj = 25˚C 3000 Tj = 150˚C 2000 2000 1000 1000 dc Half wave 3 phase 6 phase 1.0 2.0 Instantaneous forward voltage, VF - (V) 3.0 0 0 0 0 500 1000 1500 2000 Mean forward current, IF(AV) - (A) Fig.3 Dissipation curves A = 0.819645 B = –0.13673 C = 5.73 x 10–5 D = 0.042435 these values are valid for Tj = 125˚C for IF 500A to 5000A Where Fig.2 Maximum (limit) forward characteristics VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF 4/7 www.dynexsemi.com DS2012SF 10000 Conditions: Tj = 150˚C VR = 100V IF = 2000A 1000 Conditions: Tj = 150˚C VR = 100V IF = 2000A 1000 IF QS dIF/dt 100 0.1 IRM Reverse recovery current, Irr - (A) Stored charge, QS - (µC) 100 1.0 10 Rate of decay of forward current, dIF/dt - (A/µs) 100...

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