Maker : Dallas Semiconducotr
Part No. : DS2016

  Datasheet PDF : DS2016.pdf
  Cross Reference : DS2016 Cross Reference
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Product Information

DS2016 2k x 8 3V/5V Operation Static RAM www.dalsemi.com FEATURES § § Low-power CMOS design Standby current − 50 nA max at tA = 25°C VCC = 3.0V − 100 nA max at tA = 25°C VCC = 5.5V − 1 µA max at tA = 60°C VCC = 5.5V Full operation for VCC = 5.5V to 2.7V Data retention voltage = 5.5V to 2.0V Fast 5V access time − DS2016 - 100 100 ns − DS2016 - 150 150 ns Reduced-speed 3V access time − DS2016 - 100 250 ns − DS2016 - 150 250 ns Operating temperature range of -40°C to +85°C Full static operation TTL compatible inputs and outputs over voltage range of 5.5V to 2.7 volts. Available in 24-pin DIP and 24-pin SOIC packages Suitable for both battery operated and battery backup applications PIN ASSIGNMENT A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 VCC A8 A9 WE OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 § § § § § § § § § DS2016 24-Pin DIP (600-mil) DS2016R 24-Pin SOIC (300-mil) PIN DESCRIPTION A0 - A10 DQ0 - DQ7 CE WE OE VCC GND - Address Inputs - Data Input/Output - Chip Enable Input - Write Enable Input - Output Enable Input - Power Supply Input 2.7V - 5.5V - Ground DESCRIPTION The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input ( CE ) is used for device selection and can be used in order to achieve the minimum standby current mode, which facilitates both battery operated and battery backup applications. The device provides access times as fast as 100 ns when operated from a 5-volt power supply input and also provides relatively good performance of 250 ns access while operating from a 3-volt input. The device maintains TTL-level inputs and outputs over the input voltage range of 2.7 to 5.5 volts. The DS2016 is most suitable for low-power applications where battery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8 SRAM and is pin-compatible with ROM and EPROM of similar density. 1 of 9 092399 DS2016 OPERATION MODE MODE READ WRITE DESELECT STANDBY CE OE WE L L L H L X H X H L H X A0-A10 STABLE STABLE X X DQ-DQ7 DATA OUT DATA IN HIGH-Z HIGH-Z POWER ICCO ICCO ICCO ICCS ABSOLUTE MAXIMUM RATINGS SYMBOL VCC VIN , VI/O TSTG TOPR TSOLDER PARAMETER Power Supply Voltage Input, Input/Output Voltage Storage Temperature Operating Temperature Soldering Temperature/Time RATING -0.3V to +7.0V -0.3 to VCC +0.3V -55°C to +125°C -40°C to +85°C 260 °C for 10 seconds CAPACITANCE PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN TYP 5 5 MAX 10 12 UNITS pF pF (TA= 25°C) NOTES +5-VOLT OPERATION RECOMMENDED DC OPERATING CONDITIONS PARAMETER Power Supply Voltage Input High Voltage Input Low Voltage Data Retention Voltage SYMBOL VCC VIH VIL VDR MIN 4.5 2.0 -0.3 2.0 TYP 5.0 MAX 5.5 VCC+0.3 0.8 5.5 (TA= -40°C to +85°C) UNITS V V V V NOTES DC CHARACTERISTICS PARAMETER Input Leakage Current I/O Leakage Current Output High Current Output Low Current Standby Current Standby Current Standby Current Operating Current SYMBOL IIL ILO IOH IOL ICCS1 ICCS2 ICCS2 ICCO (TA= -40°C to +85°C; VCC = 5V ± 10%) CONDITIONS 0V ≤ VIN ≤ VCC CE = VIH, 0V ≤ VIO ≤ VCC VOH = 2.4V VOL = 0.4V CE = 2.0V CE ≥ VCC -0.5V tA =60°C CE ≥ VCC -0.5V tA =25°C CE = 0.8V, 200 ns cycle MIN TYP MAX ± 0.1 ± 0.5 UNITS µA µA mA mA mA µA nA mA -1.0 4.0 0.3 1 100 55 2 of 9 DS2016 AC CHARACTERISTICS READ CYCLE PARAMETER Read Cycle Time Access Time OE to Output Valid CE to Output Valid CE or OE to Output Active Output High-Z from Deselection Output Hold from Address Change SYMBOL tRC tACC tOE tCO tCOE tOD tOH (TA= -40°C to +85°C; VCC = 5V ± 10%) UNITS ns ns ns ns ns ns ns NOTES DS2016-100 DS2016-150 MIN TYP MAX MIN TYP MAX 100 150 100 150 50 70 100 150 5 5 5 5 35 10 10 60 AC CHARACT...

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