Maker : Dallas Semiconducotr
Part No. : DS2064

  Datasheet PDF : DS2064.pdf
  Cross Reference : DS2064 Cross Reference
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Shortcut : DS2064 

Product Information

DS2064 DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE CE2 A8 A9 A11 OE A10 CE1 DQ7 DQ6 DQ5 DQ4 DQ3 • Low power CMOS design • Standby current 50 nA max at 100 nA max at 1 µA max at tA = 25°C VCC = 3.0V tA = 25°C VCC = 5.5V tA = 60°C VCC = 5.5V • Full operation for VCC = 4.5V to 5.5V • Data Retention Voltage = 5.5V to 2.0V • Access time equals 200 ns at 5.0V • Operating temperature range of –40°C to +85°C • Full static operation • TTL compatible inputs and outputs • Available in 28–pin DIP and 28–pin SOIC packages • Suitable for both battery operated and battery backup applications DS2064–200 28–PIN DIP (600 MIL) DS2064S–200 28–PIN SOIC (330 MIL) PIN DESCRIPTION A0–A12 DQ0–DQ7 CE1, CE2 WE OE VCC GND NC – – – – – – – – Address Inputs Data Input/Output Chip Enable Inputs Write Enable Input Output Enable Input 5V Power Supply Input Ground No Connection DESCRIPTION The DS2064 is a 65536–bit low power, fully static random access memory organized as 8192 words by eight bits using CMOS technology. The device operates from a single power supply with a voltage input between 4.5V and 5.5V. The chip enable inputs (CE1 and CE2) are used for device selection and can be used in order to achieve the minimum standby current mode, which facilitates both battery operate and battery backup applications. The device provides fast access time of 200 ns and is most suitable for low power applications where battery operation or battery backup for nonvolatility are required. The DS2064 is a JEDEC–standard 8K x 8 SRAM and is pin–compatible with ROM and EPROM of similar density. 022598 1/9 DS2064 ABSOLUTE MAXIMUM RATINGS SYMBOL VCC VIN, VI/O TSTG TOPR TSOLDER PARAMETER Power Supply Voltage Input, Input/Output Voltage Storage Temperature Operating Temperature Soldering Temperature/Time RATING –0.3V to +7.0V –0.3 to VCC + 0.3V –55°C to +125°C –40°C to +85°C 260°C for 10 seconds RECOMMENDED DC OPERATING CONDITIONS PARAMETER Power Supply Voltage Input High Voltage Input Low Voltage Data Retention Voltage SYMBOL VCC VIH VIL VDR MIN 4.5 2.0 –0.3 2.0 TYP 5.0 MAX 5.5 VCC + 0.3 0.8 5.5 (tA = –40°C to +85°C) UNITS V V V V NOTES DC CHARACTERISTICS PARAMETER Input Leakage Current I/O Leakage Current Output High Current Output Low Current Standby Current Standby Current Standby Current Operating Current SYMBOL IIL ILO IOH IOL ICCS1 ICCS2 ICCS2 ICCO CONDITIONS 0V < VIN < VCC CE1=VIH, 0VVCC–0.5V tA=60°C CE1>VCC–0.5V tA=25°C CE1=0.8V, 200 ns cycle (tA = –40°C to +85°C; VCC=5V ± 10%) MIN TYP MAX +0.1 +0.5 –1.0 4.0 0.5 1 100 70 UNITS µA µA mA mA mA µA nA mA CAPACITANCE PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN TYP 5 5 MAX 10 12 UNITS pF pF (tA = 25°C) NOTES 022598 2/9 DS2064 AC CHARACTERISTICS, READ CYCLE PARAMETER Read Cycle Time Access Time OE to Output Valid CE to Output Valid CE or OE to Output Active Output to High–Z from Deselection Output Hold from Address Change SYMBOL tRC tACC tOE tCO tCOE tOD tOH 5 10 5 MIN 200 (tA = –40°C to +85°C; VCC=5V ± 10%) TYP MAX UNITS ns 200 100 200 ns ns ns ns 60 ns ns NOTES AC CHARACTERISTICS, WRITE CYCLE PARAMETER Write Cycle Time Write Pulse Width Address Setup Time Write Recovery Time Output High–Z from WE Output Active from WE Data Setup Time Data Hold Time SYMBOL tWC tWP tAW tWR tODW tOEW tDS tDH 5 80 0 MIN 200 150 0 10 (tA = –40°C to +85°C; VCC=5V ± 10%) TYP MAX UNITS ns ns ns ns 70 ns ns ns ns 7 7 NOTES TIMING DIAGRAM: READ CYCLE tRC ADDRESSES VIH VIL VIH VIL tOH VIH CE VIL VIH OE VIL tCOE tCOE DOUT SEE NOTE 1 tOD VOH OUTPUT VOH VOL DATA VALID VOL tACC VIH tCO tOD tOE VIH VIH VIL 022598 3/9 DS2064 TIMING DIAGRAM: WRITE CYCLE 1 tWC ADDRESSES VIH VIL VIH VIL VIH VIL tAW CE VIL VIL tWP...

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